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BSS138LT1G
+StücklisteMOSFET N-CH 50V 200MA SOT23-3
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HerstellerOnsemi
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Herstellerteil #BSS138LT1G
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Paket SOT-23-3
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Auf Lager2952
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 50 V |
| Current - Continuous Drain(Id) @ 25°C | 200mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V |
| Rds On(Max) @ Id Vgs | 3.5Ohm @ 200mA, 5V |
| Vgs(th)(Max) @ Id | 1.5V @ 1mA |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 50 pF @ 25 V |
| Power Dissipation (Max) | 225mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
Übersicht
Description
The BSS138LT1G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used for switching and amplification purposes in electronic circuits. It features a low on-resistance and is suitable for low to medium power applications. This MOSFET is housed in a compact SOT-23 package, making it ideal for space-constrained designs.
Key specifications include a maximum drain-source voltage (V_ds) of 50V and a continuous drain current (I_d) of up to 200mA. It operates efficiently with a gate-source voltage (V_gs) ranging from 1V to 20V, ensuring compatibility with various microcontroller logic levels. The BSS138LT1G features a low threshold voltage, which facilitates easy interfacing with low-voltage circuits.
This MOSFET is often utilized in battery-powered devices, load switching, level shifting, and other applications requiring efficient control of low-power signals. Its robustness and reliability make it a popular choice for designers seeking a versatile and efficient transistor solution.
Key specifications include a maximum drain-source voltage (V_ds) of 50V and a continuous drain current (I_d) of up to 200mA. It operates efficiently with a gate-source voltage (V_gs) ranging from 1V to 20V, ensuring compatibility with various microcontroller logic levels. The BSS138LT1G features a low threshold voltage, which facilitates easy interfacing with low-voltage circuits.
This MOSFET is often utilized in battery-powered devices, load switching, level shifting, and other applications requiring efficient control of low-power signals. Its robustness and reliability make it a popular choice for designers seeking a versatile and efficient transistor solution.
Equivalent
The BSS138LT1G is a small-signal N-channel MOSFET. Equivalent products include:
1. BSS138 from Nexperia
2. 2N7002 from multiple manufacturers
3. BSS123 from Infineon
4. 2N7000 for through-hole applications
5. MMBF170 from ON Semiconductor
These alternatives may vary slightly in specifications, so always verify electrical characteristics and package compatibility for your specific application.
1. BSS138 from Nexperia
2. 2N7002 from multiple manufacturers
3. BSS123 from Infineon
4. 2N7000 for through-hole applications
5. MMBF170 from ON Semiconductor
These alternatives may vary slightly in specifications, so always verify electrical characteristics and package compatibility for your specific application.
Features
The BSS138LT1G is an N-channel MOSFET designed for general-purpose switching applications. Key features include:
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 50V and a continuous drain current (I_D) of 200mA, making it suitable for low-power applications.
2. R_DS(on): This MOSFET offers a low drain-source on-resistance, typically around 3.5 ohms at V_GS = 10V, ensuring efficient performance.
3. Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 0.8V to 1.5V, allowing it to be driven by lower voltage signals.
4. Package: It is available in a compact SOT-23 package, which is beneficial for space-constrained designs.
5. Fast Switching: The device features fast switching speeds for efficient operation in high-frequency circuits.
6. Temperature Range: It operates over a wide temperature range, typically from -55°C to 150°C, ensuring reliability in various environmental conditions.
7. Applications: The BSS138LT1G is often used in load switching, level shifting, and low-side switching applications.
These features make it a versatile choice for designers looking for a reliable MOSFET in small-scale electronic projects.
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 50V and a continuous drain current (I_D) of 200mA, making it suitable for low-power applications.
2. R_DS(on): This MOSFET offers a low drain-source on-resistance, typically around 3.5 ohms at V_GS = 10V, ensuring efficient performance.
3. Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 0.8V to 1.5V, allowing it to be driven by lower voltage signals.
4. Package: It is available in a compact SOT-23 package, which is beneficial for space-constrained designs.
5. Fast Switching: The device features fast switching speeds for efficient operation in high-frequency circuits.
6. Temperature Range: It operates over a wide temperature range, typically from -55°C to 150°C, ensuring reliability in various environmental conditions.
7. Applications: The BSS138LT1G is often used in load switching, level shifting, and low-side switching applications.
These features make it a versatile choice for designers looking for a reliable MOSFET in small-scale electronic projects.
Pinout
The BSS138LT1G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used for switching and amplification purposes. It typically comes in a SOT-23 package, which has a total of three pins. The pinout and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the device is turned on allowing current to flow between the drain and source.
2. Source (S): This is the pin through which the current enters the MOSFET. In an N-channel MOSFET like the BSS138LT1G, the source is typically connected to a lower voltage compared to the drain.
3. Drain (D): This pin is where the current exits the MOSFET. The drain is connected to a higher voltage compared to the source in normal operation.
The BSS138LT1G is known for its low threshold voltage and is often used in low-voltage applications such as level shifting, logic gating, and small signal switching.
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the device is turned on allowing current to flow between the drain and source.
2. Source (S): This is the pin through which the current enters the MOSFET. In an N-channel MOSFET like the BSS138LT1G, the source is typically connected to a lower voltage compared to the drain.
3. Drain (D): This pin is where the current exits the MOSFET. The drain is connected to a higher voltage compared to the source in normal operation.
The BSS138LT1G is known for its low threshold voltage and is often used in low-voltage applications such as level shifting, logic gating, and small signal switching.
Manufacturer
The BSS138LT1G is manufactured by ON Semiconductor, now known as onsemi. onsemi is a leading supplier of semiconductor-based solutions, focusing on energy-efficient electronics. The company provides a wide range of products, including power and signal management, logic, discrete, and custom devices for automotive, industrial, cloud, and IoT markets. Their solutions help engineers solve design challenges in areas such as power management, signal management, and motor control. onsemi is recognized for its commitment to sustainability and innovation in the semiconductor industry.
Application
The BSS138LT1G is a N-channel MOSFET primarily used in low-voltage applications due to its low on-resistance and fast switching capabilities. Key application areas include:
1. Switching Circuits: Useful in DC-DC converters and power management.
2. Load Switches: Ideal for controlling power in portable devices.
3. Level Shifting: Allows interfacing between different voltage logic levels.
4. Signal Processing: Used in analog signal processing circuits.
5. LED Drivers: Suitable for driving LEDs in lighting applications.
These characteristics make it versatile for use in consumer electronics, automotive, and industrial applications.
1. Switching Circuits: Useful in DC-DC converters and power management.
2. Load Switches: Ideal for controlling power in portable devices.
3. Level Shifting: Allows interfacing between different voltage logic levels.
4. Signal Processing: Used in analog signal processing circuits.
5. LED Drivers: Suitable for driving LEDs in lighting applications.
These characteristics make it versatile for use in consumer electronics, automotive, and industrial applications.
Package
The BSS138LT1G is typically available in a SOT-23 package type. This small-outline transistor package is designed for surface-mount technology, providing a compact form factor suitable for space-constrained applications.
