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BSS138P,215
+StücklisteMOSFET N-CH 60V 360MA TO236AB
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HerstellerNexperia USA Inc.
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Herstellerteil #BSS138P,215
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Datenblatt BSS138P,215 DataSheet
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Auf Lager29065
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Spezifikationen
| Attribut | Wert |
| Supplier | Nexperia USA Inc. |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 360mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 1.6Ohm @ 300mA, 10V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 0.8 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 50 pF @ 10 V |
| PowerDissipation(Max) | 350mW (Ta), 1.14W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TA) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-236AB |
Übersicht
Description
The BSS138P can handle a maximum drain-source voltage of 50V and a continuous drain current of up to 220mA. This makes it suitable for various low-power applications such as load switching, DC-DC converters, and level shifting. Its fast switching speed, low on-resistance, and low gate charge contribute to its efficiency in power management tasks.
The "215" likely refers to a specific batch or production code associated with the BSS138P, which manufacturers use for inventory and quality control. Overall, the BSS138P is valued for its reliability, efficiency, and small footprint in electronic design projects.
Equivalent
1. 2N7002 - General-purpose N-channel MOSFET.
2. IRLML2502 - Logic level N-channel MOSFET.
3. BSS138 - Similar characteristics with slight variations in packaging or specifications.
4. DMN2075U - N-channel MOSFET with comparable voltage and current ratings.
Check datasheets for exact specifications to ensure compatibility.
Features
1. N-Channel MOSFET: Allows current to flow when the gate-to-source voltage is positive.
2. Low On-Resistance: Typically around 3.5Ω, which enhances efficiency by reducing power loss.
3. V_DS (Drain-Source Voltage): Maximum rating of 50V, suitable for moderate voltage applications.
4. I_D (Continuous Drain Current): Capable of handling up to 200mA, making it suitable for low power applications.
5. Threshold Voltage: Typically around 0.8V to 1.5V, allowing it to be driven by 3.3V and 5V logic levels.
6. SOT-23 Package: A small form factor suitable for space-constrained PCBs.
7. Fast Switching: Enables efficient performance in high-speed applications.
8. ESD Protection: Built-in protection against electrostatic discharge improves reliability.
These features make the BSS138P suitable for use in applications like signal switching, level shifting, and small load driving in consumer electronics.
Pinout
1. Gate (G): This pin controls the MOSFET's switching operation. Applying a voltage to the gate allows current to flow between the source and drain.
2. Source (S): This is the terminal through which current enters the MOSFET. For an N-channel MOSFET like the BSS138P, the source is usually connected to a lower voltage.
3. Drain (D): This is the terminal through which current exits the MOSFET. The drain is usually connected to a higher voltage compared to the source.
The BSS138P is designed for low-voltage applications and has a low on-resistance, which makes it efficient for switching tasks in battery-powered and portable devices. It is particularly valued in scenarios where space is at a premium due to its small SOT-23 package.
Manufacturer
Application
1. Switching Circuits: Used in power management for switching applications due to low on-resistance.
2. Level Shifting: Facilitates voltage level conversion in digital circuits.
3. Load Switching: Ideal for controlling power to different loads in portable devices.
4. Signal Processing: Utilized in amplifiers and other analog signal processing circuits.
5. Consumer Electronics: Common in smartphones, tablets, and other portable electronics for efficient power control.
These applications leverage the MOSFET's ability to handle low power and high-speed switching efficiently.