Abbildungen dienen nur als Referenz
BSS84
+StücklisteP-CHANNEL ENHANCEMENT MODE MOSFE
-
HerstellerANBON SEMICONDUCTOR (INT'L) LIMITED
-
Herstellerteil #BSS84
-
Paket SOT-23
-
Auf Lager3000
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
Übersicht
Equivalent
- 2N7002 (N-channel, similar specs)
- BS250 (P-channel, higher current)
- IRF9Z34N (P-channel, higher power)
- Si2301 (P-channel, SOT-23 package)
- DMG2305UX (P-channel, lower Rds(on))
Check datasheets for exact compatibility in your circuit.
Pinout
Pin Functions:
1. Gate (G): Controls the MOSFET's conductivity.
2. Drain (D): Connects to the load (negative side for P-channel).
3. Source (S): Connects to the supply voltage (positive side).
Key Features:
- VDS: -50V (max)
- ID: -130mA (max)
- Low threshold voltage (~-1V).
Commonly used for switching and amplification in low-power circuits.
Application
1. Low-Power Switching: Ideal for small-signal switching in portable devices.
2. Load Switching: Controls power to peripherals in battery-operated systems.
3. Signal Amplification: Used in audio and RF circuits for weak signal amplification.
4. Logic Level Conversion: Shifts voltage levels in digital circuits (e.g., 3.3V to 5V).
5. Protection Circuits: Prevents reverse polarity and overvoltage in sensitive electronics.
Its low threshold voltage and compact SOT-23 package make it suitable for space-constrained, low-voltage applications like IoT, wearables, and consumer electronics.
