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BSS84P H6327
+StücklisteMOSFETs P-Ch -60V -170mA SOT-23-3
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HerstellerInfineon-Technologien
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Herstellerteil #BSS84P H6327
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Datenblatt BSS84P H6327 DataSheet
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Auf Lager23462
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Packaging | MouseReel |
| Standard Pack Qty | 3000 |
Übersicht
Description
Key features of the BSS84P might include:
1. Type: P-channel MOSFET, meaning it conducts when a negative voltage is applied to its gate.
2. Application: Ideal for low-power applications, such as driving small loads, signal amplification, or switching operations in consumer electronics.
3. Voltage and Current Ratings: Usually characterized by a specific maximum drain-source voltage and continuous drain current, which defines its operational limits.
4. Package Type: Often available in a small SMD (Surface-Mount Device) package, facilitating compact circuit design.
This MOSFET is valued for its efficient performance in compact, surface-mount designs, making it a popular choice in modern electronics.
Equivalent
Features
1. Type: P-channel MOSFET, which allows for control of negative voltages.
2. Voltage and Current: It has a drain-source voltage (V_DS) of -50V and can handle a continuous drain current (I_D) typically around -130 mA.
3. R_DS(on): The on-resistance is low, usually around 10Ω at a gate-source voltage (V_GS) of -4.5V, which reduces power loss and enhances efficiency.
4. Package: Available in a SOT-23 package, making it suitable for compact PCB designs.
5. Applications: Commonly used in signal processing, low power, and battery-operated applications.
6. Temperature Range: Operates effectively over a wide temperature range, suitable for various environmental conditions.
7. Fast Switching: Offers fast switching speeds, making it ideal for high-frequency applications.
These features make the BSS84P H6327 a versatile component for designers needing reliable performance in compact, low-power circuits.
Pinout
1. Gate (G): This pin is used to control the MOSFET. By applying voltage here, the flow of current between the source and drain can be regulated.
2. Source (S): This is the terminal through which the carriers enter the channel. For a P-channel MOSFET, the source is connected to a higher voltage than the drain.
3. Drain (D): This is the terminal through which the carriers exit the channel. Current flows from source to drain in a P-channel MOSFET when activated.
This component is commonly used for switching and amplification in electronic circuits. Always refer to the manufacturer's datasheet for precise specifications and application guidelines.
Manufacturer
Application
1. Load Switching: Facilitates control of power to loads in battery-operated devices.
2. Power Management: Used in DC-DC converters and power supply circuits.
3. Amplification Circuits: Ideal for audio and signal amplification.
4. Inverter Circuits: Utilized in creating inverter circuits for small-scale power applications.
5. Signal Processing: Employed in analog and digital signal processing.
These attributes make it suitable for consumer electronics, automotive electronics, and industrial control systems.