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BSS84Q-7-F
+StücklisteBSS FAMILY SOT23 T&R 3K
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HerstellerDioden Incorporated
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Herstellerteil #BSS84Q-7-F
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Auf Lager3104
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Spezifikationen
| Attribut | Wert |
| Supplier | Diodes Incorporated |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 50 V |
| Current - Continuous Drain(Id) @ 25°C | 130mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V |
| Rds On(Max) @ Id Vgs | 10Ohm @ 100mA, 5V |
| Vgs(th)(Max) @ Id | 2V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 0.59 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 45 pF @ 25 V |
| Power Dissipation (Max) | 300mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
Übersicht
Description
Equivalent
1. BSS84LT1G from ON Semiconductor
2. FDN306P from ON Semiconductor
3. PMV48XP from Nexperia
4. IRLML6401 from Infineon Technologies
Ensure to verify the specifications such as voltage, current ratings, and package type to confirm compatibility for your specific application.
Features
1. Type: N-channel MOSFET.
2. Voltage Rating: It has a maximum drain-source voltage (Vds) of 60V.
3. Current Capacity: It can handle a continuous drain current (Id) of up to 170mA.
4. On-Resistance: The on-state resistance (Rds(on)) is quite low, typically around 5 ohms at Vgs = 10V.
5. Package: Comes in a compact SOT-23 package, making it suitable for space-constrained applications.
6. Gate Threshold Voltage: The gate threshold voltage ranges from 1V to 2.5V.
7. Fast Switching: The transistor supports fast switching speeds, making it ideal for high-frequency applications.
8. Temperature Range: Operates effectively within a temperature range of -55°C to +150°C.
These features make the BSS84Q-7-F suitable for use in a variety of applications, including load switching and signal processing in electronic devices.
Pinout
1. Gate (G): Used to control the MOSFET's operation by applying voltage to turn the device on or off.
2. Source (S): Typically connected to the negative side of the power supply for P-channel MOSFETs.
3. Drain (D): The output where the load is connected, allowing current to flow from source to drain when the MOSFET is on.
The BSS84Q-7-F is often used in applications requiring low power and high efficiency, such as power management in portable devices.