BSZ100N06LS3 G

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BSZ100N06LS3 G

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MOSFETs N-Ch 60V 20A TSDSON-8 OptiMOS 3

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Attribut Wert
Packaging MouseReel
StandardPackQty 5000

Übersicht

Description

The BSZ100N06LS3 G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in power management applications. Manufactured by Infineon Technologies, it is designed for high efficiency in power conversion and switching applications. Featuring a low on-state resistance (R_DS(on)), it helps minimize power loss and improve performance in electronic circuits.
This MOSFET comes in a compact SuperSO8 package, making it suitable for space-constrained applications. It is optimized for fast switching, which enhances the efficiency of power supplies and motor drives. The BSZ100N06LS3 G supports a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 100A, making it ideal for medium to high power applications.
Additionally, it offers robust thermal performance and reliability under various operating conditions. The component is RoHS compliant, aligning with environmental and safety standards. Its typical applications include DC-DC converters, synchronous rectification, and other power management systems in consumer, industrial, and automotive electronics.

Equivalent

The BSZ100N06LS3 G is a N-channel MOSFET with specifications that include a 60V voltage rating and a 11.5 mΩ on-resistance. Equivalent products with similar specifications might include:
- Infineon BSC010N04LS
- Vishay SiR840DP
- ON Semiconductor NTMFS5C604NL
- Toshiba TPH1R306PL
- Nexperia PSMN1R0-60YLC
These alternatives may differ slightly in terms of packaging or additional features. Always check the datasheets for precise matching specifications.

Features

The BSZ100N06LS3 G is a power MOSFET from Infineon Technologies, designed for high-efficiency power conversion and management applications. Key features include:
1. N-Channel MOSFET: This device is an N-channel MOSFET, which is suitable for high-side and low-side switching applications.
2. Voltage and Current Ratings: It is typically rated for a drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of around 100A, making it suitable for medium to high-power applications.
3. Low On-Resistance: The MOSFET features a low R_DS(on), which minimizes conduction losses and improves efficiency.
4. Thermal Resistance: The package design includes effective thermal management features, ensuring reliability under high-power conditions.
5. SMD Package: It is commonly available in a surface-mount package, which is suited for compact and efficient board designs.
6. Applications: Typical applications include automotive, industrial, and consumer electronics where efficient power management is crucial.
These features make the BSZ100N06LS3 G a versatile component for various power electronic applications.

Pinout

The BSZ100N06LS3 G is a power MOSFET manufactured by Infineon Technologies. It typically comes in a package with 3 pins. The primary function of this MOSFET is in switching applications, particularly in power management, where it can be used for high-efficiency switching in power supplies, motor control, and other power conversion applications.
In general, the pin configuration for a typical 3-pin MOSFET package is:
1. Gate (G): This pin is used to control the MOSFET by applying the appropriate voltage. It acts as the input for the MOSFET, determining the switching state (on or off) of the device.
2. Drain (D): The drain is the terminal through which the load current exits the MOSFET when it is in the "on" state.
3. Source (S): The source is the terminal through which the load current enters the MOSFET. It typically connects to the ground or the negative voltage supply in a circuit.
For the exact pin configuration and detailed specifications, referring to the manufacturer's datasheet for the BSZ100N06LS3 G is recommended.

Manufacturer

The BSZ100N06LS3 G is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer headquartered in Neubiberg, Germany. It was founded in 1999 as a spin-off from Siemens AG. Infineon is known for designing and producing a wide range of semiconductor solutions, including microcontrollers, power electronics, sensors, and security solutions.
The company serves various industries, including automotive, industrial, consumer electronics, and communication. Infineon is particularly recognized for its innovations in power semiconductors and automotive electronics, where it provides components essential for electric vehicles, driver assistance systems, and other automotive applications. The company emphasizes energy efficiency, mobility, and security in its product offerings.

Application

The BSZ100N06LS3 G is a MOSFET used primarily in automotive and industrial applications. Its key application areas include power management systems, such as DC-DC converters and power supplies, due to its high efficiency and low on-resistance. It is also utilized in motor drives for automotive systems, including electric power steering and other electric motor control circuits. Additionally, this MOSFET is suitable for battery management systems and general-purpose switching in various industrial electronic devices. Its robust design supports high-current applications and ensures reliable performance under demanding conditions.

Package

The BSZ100N06LS3 G is typically available in a PG-TDSON-8 package type. This refers to a Power Transistor Dual Flat No Leads (DFN) package which is commonly used for surface-mount applications in electronics.

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