Abbildungen dienen nur als Referenz
BSZ100N06LS3 G
+StücklisteMOSFETs N-Ch 60V 20A TSDSON-8 OptiMOS 3
-
HerstellerInfineon-Technologien
-
Herstellerteil #BSZ100N06LS3 G
-
Datenblatt BSZ100N06LS3 G DataSheet
-
Auf Lager16085
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Packaging | MouseReel |
| StandardPackQty | 5000 |
Übersicht
Description
This MOSFET comes in a compact SuperSO8 package, making it suitable for space-constrained applications. It is optimized for fast switching, which enhances the efficiency of power supplies and motor drives. The BSZ100N06LS3 G supports a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 100A, making it ideal for medium to high power applications.
Additionally, it offers robust thermal performance and reliability under various operating conditions. The component is RoHS compliant, aligning with environmental and safety standards. Its typical applications include DC-DC converters, synchronous rectification, and other power management systems in consumer, industrial, and automotive electronics.
Equivalent
- Infineon BSC010N04LS
- Vishay SiR840DP
- ON Semiconductor NTMFS5C604NL
- Toshiba TPH1R306PL
- Nexperia PSMN1R0-60YLC
These alternatives may differ slightly in terms of packaging or additional features. Always check the datasheets for precise matching specifications.
Features
1. N-Channel MOSFET: This device is an N-channel MOSFET, which is suitable for high-side and low-side switching applications.
2. Voltage and Current Ratings: It is typically rated for a drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of around 100A, making it suitable for medium to high-power applications.
3. Low On-Resistance: The MOSFET features a low R_DS(on), which minimizes conduction losses and improves efficiency.
4. Thermal Resistance: The package design includes effective thermal management features, ensuring reliability under high-power conditions.
5. SMD Package: It is commonly available in a surface-mount package, which is suited for compact and efficient board designs.
6. Applications: Typical applications include automotive, industrial, and consumer electronics where efficient power management is crucial.
These features make the BSZ100N06LS3 G a versatile component for various power electronic applications.
Pinout
In general, the pin configuration for a typical 3-pin MOSFET package is:
1. Gate (G): This pin is used to control the MOSFET by applying the appropriate voltage. It acts as the input for the MOSFET, determining the switching state (on or off) of the device.
2. Drain (D): The drain is the terminal through which the load current exits the MOSFET when it is in the "on" state.
3. Source (S): The source is the terminal through which the load current enters the MOSFET. It typically connects to the ground or the negative voltage supply in a circuit.
For the exact pin configuration and detailed specifications, referring to the manufacturer's datasheet for the BSZ100N06LS3 G is recommended.
Manufacturer
The company serves various industries, including automotive, industrial, consumer electronics, and communication. Infineon is particularly recognized for its innovations in power semiconductors and automotive electronics, where it provides components essential for electric vehicles, driver assistance systems, and other automotive applications. The company emphasizes energy efficiency, mobility, and security in its product offerings.