Abbildungen dienen nur als Referenz
BSZ100N06LS3G
+Stückliste-
HerstellerInfineon-Technologien
-
Herstellerteil #BSZ100N06LS3G
-
Auf Lager4867
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Manufacturer | Infineon Technologies |
| Package / Case | TSDSON-8(3.3x3.3) |
| Operating Temperature | -55℃~+150℃ |
| Rds(on) | 10mΩ@10V,20A |
| Drain to Source Voltage (Vdss) | 60V |
| Pd - Power Dissipation | 50W |
| Current - Continuous Drain(Id) | 20A |
| Reverse Transfer Capacitance (Crss @ Vds) | 660pF@30V |
| Input Capacitance(Ciss @ Vds) | 3500pF@60V |
| Gate Threshold Voltage (Vgs(th) @ Id) | 2.2V |
| Gate Charge(Qg) | 45nC@10V |
Übersicht
Description
BSZ100N06LS3G is a high-performance N-channel MOSFET designed for various applications, including power management, DC-DC converters, and motor control. It features a low gate threshold voltage, enabling efficient operation at lower voltages, and boasts a low on-resistance, which reduces power loss during operation. The device typically supports high-speed switching, making it suitable for applications requiring rapid on-off control.
With a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) rating of around 100A, the BSZ100N06LS3G is robust enough for demanding applications. Its surface mount package (DPAK) offers ease of integration into compact designs while ensuring effective thermal management.
Overall, this MOSFET is valued for its efficiency, reliability, and versatility, making it a popular choice in modern electronic designs.
With a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) rating of around 100A, the BSZ100N06LS3G is robust enough for demanding applications. Its surface mount package (DPAK) offers ease of integration into compact designs while ensuring effective thermal management.
Overall, this MOSFET is valued for its efficiency, reliability, and versatility, making it a popular choice in modern electronic designs.
Equivalent
The BSZ100N06LS3G is an N-channel MOSFET. Equivalent products include the IRLZ44N STP100N6F3, and FQP100N06. Always verify parameters like voltage, current, RDS(on), and package type when selecting equivalents for specific applications.
Features
The BSZ100N06LS3G is an N-channel MOSFET known for its high efficiency and performance in power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various switching and power management applications.
2. Current Rating: The continuous drain current (I_D) is 100A, allowing it to handle significant load currents.
3. Low On-Resistance: The on-resistance (R_DS(on)) is typically around 6.5 mΩ at V_GS = 10V, which minimizes power loss during operation.
4. Fast Switching: It offers fast switching speeds, enhancing efficiency in high-frequency applications.
5. Thermal Performance: The device features a high maximum power dissipation capability, ensuring reliable operation under thermal stress.
6. Package Type: Available in a TO-220 package, it allows for easy heat dissipation and mounting.
These features make the BSZ100N06LS3G suitable for applications like DC-DC converters, motor control, and power management systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various switching and power management applications.
2. Current Rating: The continuous drain current (I_D) is 100A, allowing it to handle significant load currents.
3. Low On-Resistance: The on-resistance (R_DS(on)) is typically around 6.5 mΩ at V_GS = 10V, which minimizes power loss during operation.
4. Fast Switching: It offers fast switching speeds, enhancing efficiency in high-frequency applications.
5. Thermal Performance: The device features a high maximum power dissipation capability, ensuring reliable operation under thermal stress.
6. Package Type: Available in a TO-220 package, it allows for easy heat dissipation and mounting.
These features make the BSZ100N06LS3G suitable for applications like DC-DC converters, motor control, and power management systems.
Pinout
The BSZ100N06LS3G is an N-channel MOSFET with a pin count of 5. Its primary functions include switching and amplifying signals in electronic circuits, particularly in power management applications.
The pin configuration is as follows:
1. Gate (G) - This terminal controls the MOSFET's operation, allowing it to switch on/off.
2. Drain (D) - The current flows out of this terminal when the MOSFET is on.
3. Source (S) - This terminal is connected to the ground or the negative side of the circuit.
The BSZ100N06LS3G is designed for high efficiency and low R_DS(on), making it suitable for applications like power supplies, motor drivers, and lighting controls. It offers a compact package with robust performance characteristics.
The pin configuration is as follows:
1. Gate (G) - This terminal controls the MOSFET's operation, allowing it to switch on/off.
2. Drain (D) - The current flows out of this terminal when the MOSFET is on.
3. Source (S) - This terminal is connected to the ground or the negative side of the circuit.
The BSZ100N06LS3G is designed for high efficiency and low R_DS(on), making it suitable for applications like power supplies, motor drivers, and lighting controls. It offers a compact package with robust performance characteristics.
Manufacturer
The BSZ100N06LS3G is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in the production of discrete, logic, and analog components, focusing on high-volume production to meet the demands of various industries including automotive, industrial, consumer electronics, and communication.
Nexperia originated from the NXP Semiconductors' standard product division and is known for its commitment to quality and reliability in semiconductor manufacturing. The company emphasizes efficient production processes and innovative technologies to deliver high-performance components. The BSZ100N06LS3G itself is a N-channel MOSFET, commonly used in power management applications due to its efficiency and capability to handle high currents.
Overall, Nexperia plays a significant role in the semiconductor landscape, providing essential components for a wide range of electronic applications.
Nexperia originated from the NXP Semiconductors' standard product division and is known for its commitment to quality and reliability in semiconductor manufacturing. The company emphasizes efficient production processes and innovative technologies to deliver high-performance components. The BSZ100N06LS3G itself is a N-channel MOSFET, commonly used in power management applications due to its efficiency and capability to handle high currents.
Overall, Nexperia plays a significant role in the semiconductor landscape, providing essential components for a wide range of electronic applications.
Application
The BSZ100N06LS3G is an N-channel MOSFET primarily used in applications such as power management systems, DC-DC converters, motor drives, and switching power supplies. Its low on-resistance and high-speed switching capabilities make it suitable for efficient power conversion in consumer electronics, automotive systems, and industrial automation. Additionally, it is often utilized in renewable energy applications, including solar inverters and energy storage solutions, due to its reliability and thermal performance.
Package
The BSZ100N06LS3G is packaged in a TO-220 form factor. This package type is commonly used for power MOSFETs, providing efficient heat dissipation and ease of mounting on heatsinks.
