BSZ440N10NS3G

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BSZ440N10NS3G

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  • HerstellerInfineon-Technologien

  • Herstellerteil #BSZ440N10NS3G

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Spezifikationen

Attribut Wert
Manufacturer Infineon Technologies
Package / Case TSDSON-8(3.3x3.3)
Operating Temperature -55℃~+150℃
Rds(on) 44mΩ@10V,12A
Drain to Source Voltage (Vdss) 100V
Pd - Power Dissipation 29W
Current - Continuous Drain(Id) 18A
Reverse Transfer Capacitance (Crss @ Vds) 6pF@50V
Input Capacitance(Ciss @ Vds) 640pF@50V
Type 1 N-channel
Gate Threshold Voltage (Vgs(th) @ Id) 3.5V

Übersicht

Description

The BSZ440N10NS3G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It belongs to the N-channel family and features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 440A, making it suitable for demanding power management tasks. The device is built using advanced silicon technology, which ensures low on-resistance (R_DS(on)), enhancing its efficiency and reducing power loss during operation.
This MOSFET is commonly used in applications such as DC-DC converters, motor drives, and power supplies, where fast switching speeds and high thermal performance are critical. The BSZ440N10NS3G is housed in a TO-220 package, facilitating effective heat dissipation and easy integration into various electronic systems. Its combination of high performance and reliability makes it a popular choice among engineers and designers in the power electronics field.

Equivalent

The BSZ440N10NS3G is a N-channel MOSFET. Equivalent products include the IRF440, STP440N10, and FQP44N10. Ensure that the specifications, such as voltage rating, current capacity, and R_DS(on), match your requirements when considering substitutes. Always consult datasheets for precise comparisons.

Features

The BSZ440N10NS3G is a N-channel MOSFET designed for high efficiency and performance in power management applications. Key features include:
1. Voltage Rating: 100V maximum drain-source voltage (Vds).
2. Current Rating: 44A continuous drain current (Id) at 25°C, ensuring robust performance in high-load scenarios.
3. RDS(on): Low on-resistance (typically 10 mΩ), which enhances efficiency by reducing conduction losses.
4. Gate Threshold Voltage: A gate-source threshold voltage (Vgs(th)) of 2-4V, allowing for easy drive with standard logic levels.
5. Fast Switching: Optimized for fast switching speeds, making it suitable for applications like DC-DC converters and power supplies.
6. Package Type: Available in a TO-220 package, facilitating effective thermal management and mounting flexibility.
7. Thermal Performance: Excellent thermal characteristics, enabling higher reliability and efficiency in thermal management.
These features make the BSZ440N10NS3G ideal for various applications in the automotive, industrial, and consumer electronics sectors.

Pinout

The BSZ440N10NS3G is an N-channel MOSFET with a pin count of 3. The functions of the pins are as follows:
1. Gate (G): This pin is used to control the MOSFET; applying a voltage here allows current to flow from the drain to the source.
2. Drain (D): This pin is where the current flows out when the MOSFET is turned on.
3. Source (S): This pin is the entry point for current when the MOSFET is conducting.
The BSZ440N10NS3G is primarily used in power management applications, including DC-DC converters and motor control, due to its low on-resistance and high speed.

Manufacturer

The BSZ440N10NS3G is manufactured by Infineon Technologies, a global semiconductor company based in Germany. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company primarily focuses on markets such as automotive, industrial, and consumer electronics, providing innovative products that enhance energy efficiency and performance. Infineon is recognized for its expertise in power management and has a significant presence in the development of components for electric vehicles and renewable energy applications.

Application

The BSZ440N10NS3G is an N-channel MOSFET primarily used in power management applications. Its key application areas include:
1. Switching Power Supplies: Efficiently managing and converting DC power.
2. DC-DC Converters: Enhancing efficiency in voltage regulation and power conversion.
3. Motor Drives: Controlling power in electric motors for industrial applications.
4. LED Drivers: Regulating power for LED lighting systems.
5. Battery Management Systems: Ensuring safe and efficient charging and discharging of batteries.
With its low on-resistance and high-speed switching capabilities, it is ideal for applications requiring high efficiency and reliable performance.

Package

The BSZ440N10NS3G is packaged in a DPAK (TO-252) format. This package type is surface-mounted and designed for high efficiency in power applications.

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