Abbildungen dienen nur als Referenz
BUK7K6R2-40E
+Stückliste-
HerstellerNexperia
-
Herstellerteil #BUK7K6R2-40E
-
Auf Lager9476
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Brand | Nexperia |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Technology | Si |
| Mounting Type | SMD/SMT |
| Package / Case | LFPAK-56D-8 |
Übersicht
Description
The BUK7K6R2-40E is packaged in a compact DPAK (TO-252) format, facilitating easy integration into circuit designs while ensuring effective heat dissipation. Its fast switching capabilities make it ideal for high-frequency applications, enhancing overall system efficiency.
Additionally, the MOSFET is designed to withstand harsh environmental conditions, making it reliable for industrial and automotive applications. Understanding its electrical characteristics and thermal management is crucial for optimizing its performance in specific applications. Overall, the BUK7K6R2-40E is a versatile and efficient choice for modern power electronics.
Equivalent
Features
1. Voltage Rating: It typically supports drain-source voltages up to 40V, making it suitable for a wide range of circuits.
2. Current Rating: The device can handle continuous drain currents of up to 70A, depending on the thermal management.
3. Low On-Resistance: It boasts a low RDS(on) value, which minimizes power losses and enhances efficiency during operation.
4. Fast Switching Speed: Optimized for fast switching, it improves the efficiency of power conversion in applications such as DC-DC converters.
5. Thermal Stability: The MOSFET features a robust thermal design, allowing it to operate effectively at elevated temperatures.
6. Package Type: Usually available in TO-220 or DPAK packages, facilitating easy integration into various circuit designs.
These attributes make the BUK7K6R2-40E suitable for applications in automotive, industrial, and consumer electronics.
Pinout
1. Gate (G): Controls the switching of the MOSFET; applying a voltage here turns the device on.
2. Drain (D): The output terminal where the load connects; current flows from drain to source when the device is on.
3. Source (S): The terminal through which current enters the MOSFET; connected to ground in low-side switching applications.
4. Two additional pins may be used for specific functions or heat dissipation, depending on the package type.
This MOSFET is designed for high efficiency and low on-resistance, making it suitable for various high-performance applications.