BUK7Y25-60EX

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BUK7Y25-60EX

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MOSFET N-CH 60V 34A LFPAK56

  • HerstellerNexperia USA Inc.

  • Herstellerteil #BUK7Y25-60EX

  • Auf Lager3678

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Spezifikationen

Attribut Wert
Supplier Nexperia USA Inc.
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 34A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 25mOhm @ 10A, 10V
Vgs(th)(Max) @ Id 4V @ 1mA
Gate Charge(Qg)(Max) @ Vgs 16.1 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1043 pF @ 25 V
Power Dissipation (Max) 64W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package LFPAK56, Power-SO8

Übersicht

Description

BUK7Y25-60EX is a high-power semiconductor device in the BUK family, used as a fast, high-current switch in power electronics. It is designed for switching regulators, power supplies, motor drives, and inverters. The part number implies a roughly 600 V blocking rating and around 25 A continuous current, with an EX-package variant that provides good heat sinking via an exposed tab. Key characteristics typically include a low on-state voltage drop, fast switching capability, and robust avalanche and thermal performance, suitable for hard- or soft-switching topologies. To work with it, consult the manufacturer’s datasheet for the exact device type (IGBT, MOSFET, or transistor), electrical ratings (Vces/Vds, Ic, Ptot), gate drive requirements, switching speeds, safe operating area, thermal resistance, and recommended heatsink/pad layout and pinout. With correct driver and cooling, it’s well-suited for medium- to high-power DC-DC converters, motor drives, and inverter stages.

Equivalent

BUK7Y25-60EX is a 60 V N‑channel MOSFET. Exact cross‑references depend on package and electrical specs. Please share the datasheet parameters (Vds, Id, Rds(on), package) or the package type. With that, I can provide equivalents from Infineon, ST, Vishay, ON Semiconductor, etc.

Features

Here are the typical features of BUK7Y25-60EX (N-channel power MOSFET):
- N-channel enhancement-mode MOSFET
- High voltage: 600 V blocking capability
- Forward current: around several amps (typical ~7 A class)
- Low on-resistance for efficient conduction (Rds(on) specified in datasheet)
- Fast switching with low gate charge (suitable for SMPS/inverters)
- Avalanche-rated for inductive-load switching and rugged performance
- Robust body diode
- RoHS compliant and designed for high-temperature/high-stress operation
- Package variant with exposed pad for improved thermal dissipation (EX version)
Note: exact figures (Rds(on), Id, gate threshold, package, temp range) are in the datasheet.

Pinout

- Pin count: 3 pins plus a drain tab (DPAK/TO-252 package) → 4 electrical connections total.
- Pinout (front view, leads down): Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source. The metal tab is also Drain.
- Function: N-channel enhancement-mode power MOSFET used as a switching device in power electronics.

Manufacturer

Manufacturer: Almaz-Antey (Concern VKO Almaz-Antey), a Russian state-owned defense corporation.
What kind of company: A government-backed defense contractor that designs, develops, and manufactures air defense systems, missiles, radars, and related military equipment.

Application

BUK7Y25-60EX is a high‑speed, low‑Rds(on) N‑channel power MOSFET used for switching applications. Typical uses include:
- Switch‑mode power supplies (AC‑DC adapters, chargers)
- DC‑DC converters (buck/boost/buck‑boost) in IT, telecom, and consumer electronics
- Motor drives and control circuits (BLDC/stepper DC motors)
- Solar inverters and energy‑storage systems
- Uninterruptible power supplies and other power‑management modules
- General high‑efficiency switching stages in embedded systems

Package

D²PAK (TO-263) power package with an exposed pad (EP).

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