Abbildungen dienen nur als Referenz
BVSS123LT1G
+StücklisteMOSFET N-CH 100V 170MA SOT23-3
-
HerstellerOnsemi
-
Herstellerteil #BVSS123LT1G
-
Paket SOT23-3
-
Auf Lager3526
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 170mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 6Ohm @ 100mA, 10V |
| Vgs(th)(Max)@Id | 2.8V @ 1mA |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 20 pF @ 25 V |
| PowerDissipation(Max) | 225mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
Übersicht
Description
The BVSS123LT1G is a type of NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for general-purpose switching and amplification applications. This transistor is known for its small size and surface-mount package, making it suitable for compact electronic designs. It is commonly used in consumer electronics, industrial equipment, and communication devices.
Key features of the BVSS123LT1G include:
- Configuration: NPN
- Package Type: SOT-23, which allows for space-saving designs
- Collector-Emitter Voltage (Vce): Typically around 100V
- Collector Current (Ic): Can handle a current up to 200mA
- Power Dissipation: Approximately 225mW
The transistor operates efficiently across a wide range of frequencies, making it versatile for various circuit applications. It is used in switching applications due to its fast response time and in linear amplification applications due to its stable current gain. The BVSS123LT1G is favored by engineers for its reliability and performance in small-signal and low-power applications.
Key features of the BVSS123LT1G include:
- Configuration: NPN
- Package Type: SOT-23, which allows for space-saving designs
- Collector-Emitter Voltage (Vce): Typically around 100V
- Collector Current (Ic): Can handle a current up to 200mA
- Power Dissipation: Approximately 225mW
The transistor operates efficiently across a wide range of frequencies, making it versatile for various circuit applications. It is used in switching applications due to its fast response time and in linear amplification applications due to its stable current gain. The BVSS123LT1G is favored by engineers for its reliability and performance in small-signal and low-power applications.
Equivalent
The BVSS123LT1G is a small-signal N-channel MOSFET. Equivalent products with similar specifications might include the BSS123 from various manufacturers like ON Semiconductor, Vishay, and others. When looking for equivalents, ensure the voltage, current ratings, and package type are compatible. Always refer to the datasheets for precise comparisons to ensure they meet your specific requirements.
Features
The BVSS123LT1G is a Schottky barrier diode designed for high-speed switching applications and is commonly used in low voltage and high-frequency circuits. Some key features include:
1. Low Forward Voltage Drop: This minimizes power loss and enhances efficiency.
2. High-Speed Switching: Offers rapid response times ideal for high-frequency applications.
3. Low Capacitance: Ensures minimal signal distortion at high frequencies.
4. Guard Ring Protection: Improves the reliability and longevity of the diode by protecting against excessive voltage and current.
5. Surface-Mount Package: Available in a SOD-323 package, facilitating compact design and automated assembly.
6. Low Reverse Leakage Current: Reduces unwanted power dissipation in reverse-biased conditions.
These features make the BVSS123LT1G suitable for use in power management, RF signal processing, and rectification systems where efficiency and speed are crucial.
1. Low Forward Voltage Drop: This minimizes power loss and enhances efficiency.
2. High-Speed Switching: Offers rapid response times ideal for high-frequency applications.
3. Low Capacitance: Ensures minimal signal distortion at high frequencies.
4. Guard Ring Protection: Improves the reliability and longevity of the diode by protecting against excessive voltage and current.
5. Surface-Mount Package: Available in a SOD-323 package, facilitating compact design and automated assembly.
6. Low Reverse Leakage Current: Reduces unwanted power dissipation in reverse-biased conditions.
These features make the BVSS123LT1G suitable for use in power management, RF signal processing, and rectification systems where efficiency and speed are crucial.
Pinout
The BVSS123LT1G is a N-channel MOSFET with a single pin configuration. It typically comes in a SOT-23 package, which includes three pins: Gate (G), Source (S), and Drain (D).
1. Gate (G): This pin is used to control the conductivity between the drain and source. Applying a voltage to the gate allows current to flow between the drain and source.
2. Source (S): This is the terminal through which the majority carriers enter the MOSFET. In an N-channel MOSFET, the source is typically connected to the ground or the lower potential side of the circuit.
3. Drain (D): This is the terminal through which the majority carriers exit the MOSFET when it is in the 'on' state. The drain is typically connected to the load in the circuit.
The MOSFET is commonly used for switching and amplification purposes. Its compact size and low on-resistance make it suitable for various applications in portable and battery-powered devices.
1. Gate (G): This pin is used to control the conductivity between the drain and source. Applying a voltage to the gate allows current to flow between the drain and source.
2. Source (S): This is the terminal through which the majority carriers enter the MOSFET. In an N-channel MOSFET, the source is typically connected to the ground or the lower potential side of the circuit.
3. Drain (D): This is the terminal through which the majority carriers exit the MOSFET when it is in the 'on' state. The drain is typically connected to the load in the circuit.
The MOSFET is commonly used for switching and amplification purposes. Its compact size and low on-resistance make it suitable for various applications in portable and battery-powered devices.
Manufacturer
The BVSS123LT1G is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a leading semiconductor supplier that focuses on energy-efficient electronics. The company provides a wide range of semiconductor solutions, including power and signal management, logic, discrete, and custom devices for various sectors such as automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace, and power applications. Onsemi is recognized for its commitment to innovation and sustainable energy solutions, helping to advance technology in several industries.
Application
The BVSS123LT1G is a small-signal switching diode often used in various electronic applications. Its primary application areas include:
1. Signal Routing: Used in circuits to route signals efficiently, especially in RF and microwave applications.
2. Switching Applications: Suitable for fast switching in digital circuits due to its low capacitance and quick recovery time.
3. Protection Circuits: Acts as a protection component against voltage spikes and transients in sensitive circuits.
4. Rectification: Utilized in small power rectification tasks in low current environments.
5. Voltage Clamping: Useful in clamping applications to prevent voltage overshoots.
Its small size and efficient performance make it ideal for compact and portable electronic devices.
1. Signal Routing: Used in circuits to route signals efficiently, especially in RF and microwave applications.
2. Switching Applications: Suitable for fast switching in digital circuits due to its low capacitance and quick recovery time.
3. Protection Circuits: Acts as a protection component against voltage spikes and transients in sensitive circuits.
4. Rectification: Utilized in small power rectification tasks in low current environments.
5. Voltage Clamping: Useful in clamping applications to prevent voltage overshoots.
Its small size and efficient performance make it ideal for compact and portable electronic devices.
Package
The BVSS123LT1G is a small-signal diode that comes in a SOT-23 package type, which is a standard surface-mount package.
