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BYC8B-600PJ
+StücklisteDIODE GEN PURP 600V 8A D2PAK
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HerstellerWeEn Halbleiter
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Herstellerteil #BYC8B-600PJ
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Datenblatt BYC8B-600PJ DataSheet
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Paket TO-263-3
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Auf Lager9695
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | WeEn Semiconductors |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified(Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 3.4 V @ 8 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 18 ns |
| Current - Reverse Leakage @ Vr | 20 µA @ 600 V |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
