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BYG23T-M3/TR
+StücklisteDIODE AVALANCHE 1300V 1A DO214AC
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HerstellerVishay General Semiconductor-Diodes Division
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Herstellerteil #BYG23T-M3/TR
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Auf Lager6171
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Spezifikationen
| Attribut | Wert |
| Part Status | Active |
| Technology | Avalanche |
| Voltage - DC Reverse (Vr) (Max) | 1300 V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.9 V @ 1 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 5 µA @ 1300 V |
| Capacitance @ Vr, F | 9pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AC, SMA |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Base Product Number | BYG23 |
| Reverse Recovery Time (trr) | 75 ns |
Übersicht
Description
BYG23T-M3/TR is a high-performance transistor designed for various electronic applications. It typically features a N-channel MOSFET configuration, which allows for efficient switching and amplification of electrical signals. The "BYG" prefix often signifies its manufacturer's branding or specific product line, while "23T" may denote its particular specifications, such as voltage and current ratings. The "M3" designation might indicate packaging type or lead configuration, and "TR" typically stands for tape and reel packaging, facilitating automated assembly processes.
This transistor is commonly utilized in power management, signal processing, and switching applications due to its low on-resistance and fast switching capabilities. It is suitable for use in consumer electronics, industrial equipment, and automotive systems, providing reliable performance under varying conditions.
When integrating the BYG23T-M3/TR into designs, engineers should consult the datasheet for detailed electrical characteristics, thermal limits, and application guidelines to ensure optimal performance and reliability in their specific use cases.
This transistor is commonly utilized in power management, signal processing, and switching applications due to its low on-resistance and fast switching capabilities. It is suitable for use in consumer electronics, industrial equipment, and automotive systems, providing reliable performance under varying conditions.
When integrating the BYG23T-M3/TR into designs, engineers should consult the datasheet for detailed electrical characteristics, thermal limits, and application guidelines to ensure optimal performance and reliability in their specific use cases.
Equivalent
The BYG23T-M3/TR is a Schottky barrier rectifier diode. Equivalent products include the 1N5817, 1N5818, and 1N5819 diodes, which are also Schottky rectifiers with similar voltage and current ratings. Ensure to check specific datasheets for precise specifications to confirm compatibility.
Features
The BYG23T-M3/TR is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle continuous drain currents up to 20A, allowing it to efficiently manage high power loads.
3. R_DS(on) Value: The device offers a low on-resistance, typically around 10 mΩ, which minimizes power loss during operation.
4. Fast Switching Speed: It provides quick turn-on and turn-off capabilities, enhancing overall system efficiency.
5. Package Type: Usually available in a compact surface-mount package (such as SOIC), allowing for efficient space utilization on PCBs.
6. Thermal Performance: Designed to manage thermal dissipation effectively, supporting high-performance applications without overheating.
These features make the BYG23T-M3/TR ideal for DC-DC converters, motor drivers, and other power management systems.
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle continuous drain currents up to 20A, allowing it to efficiently manage high power loads.
3. R_DS(on) Value: The device offers a low on-resistance, typically around 10 mΩ, which minimizes power loss during operation.
4. Fast Switching Speed: It provides quick turn-on and turn-off capabilities, enhancing overall system efficiency.
5. Package Type: Usually available in a compact surface-mount package (such as SOIC), allowing for efficient space utilization on PCBs.
6. Thermal Performance: Designed to manage thermal dissipation effectively, supporting high-performance applications without overheating.
These features make the BYG23T-M3/TR ideal for DC-DC converters, motor drivers, and other power management systems.
Pinout
The BYG23T-M3/TR is a silicon-controlled rectifier (SCR) device with a total of 4 pins. The pin configuration is as follows:
1. Anode (A): Connects to the positive voltage supply.
2. Cathode (K): Connects to the load and is the output terminal.
3. Gate (G): Used to trigger the SCR; connecting a small current to the gate allows the device to conduct.
4. Case (Tab): Typically connected to the cathode for heat dissipation.
The BYG23T-M3/TR is designed for applications such as phase control, motor control, and switching applications where AC power management is critical. It has a blocking voltage rating and is suitable for high-voltage operations.
1. Anode (A): Connects to the positive voltage supply.
2. Cathode (K): Connects to the load and is the output terminal.
3. Gate (G): Used to trigger the SCR; connecting a small current to the gate allows the device to conduct.
4. Case (Tab): Typically connected to the cathode for heat dissipation.
The BYG23T-M3/TR is designed for applications such as phase control, motor control, and switching applications where AC power management is critical. It has a blocking voltage rating and is suitable for high-voltage operations.
Manufacturer
The BYG23T-M3/TR is manufactured by ON Semiconductor, a company that specializes in semiconductor solutions. Headquartered in Phoenix, Arizona, ON Semiconductor designs and produces a wide range of semiconductor products, including power management, analog, and sensor devices, as well as discrete components.
The company serves various sectors, including automotive, industrial, communications, and consumer electronics. ON Semiconductor is known for its commitment to innovation, energy efficiency, and sustainability, catering to the growing demand for high-performance and reliable electronic solutions.
The company serves various sectors, including automotive, industrial, communications, and consumer electronics. ON Semiconductor is known for its commitment to innovation, energy efficiency, and sustainability, catering to the growing demand for high-performance and reliable electronic solutions.
Application
The BYG23T-M3/TR is a high-voltage, fast-switching N-channel MOSFET used in various applications, including power switching, DC-DC converters, and motor control. Its features make it suitable for use in power management circuits, automotive applications, and renewable energy systems like solar inverters. Additionally, it is employed in electronic devices for efficient energy transfer and thermal management. The device's reliability in high-temperature environments also makes it ideal for industrial applications.
Package
The BYG23T-M3/TR is packaged in a surface mount device (SMD) format, specifically a SOT-23 package. This compact package type is suitable for various applications in electronic circuits, allowing efficient space utilization on PCBs.
