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CDM22010-650 SL
+StücklisteMOSFET N-CH 650V 10A TO220
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HerstellerCentral Semiconductor Corp.
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Herstellerteil #CDM22010-650 SL
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Auf Lager476
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Spezifikationen
| Attribut | Wert |
| Supplier | Central Semiconductor Corp |
| Package | Tube |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 10A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 1Ohm @ 5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 20 nC @ 10 V |
| Vgs(Max) | 30V |
| InputCapacitance(Ciss)(Max)@Vds | 1168 pF @ 25 V |
| PowerDissipation(Max) | 2W (Ta), 156W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220-3 |
