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MOSFET P-CH 30V 11A DIE
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HerstellerCentral Semiconductor Corp.
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Herstellerteil #CP802-CWDM3011P-CT
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Spezifikationen
| Attribut | Wert |
| Supplier | Central Semiconductor Corp |
| Package / Case | Tray |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 11A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 13mOhm @ 1A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 80 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3100 pF @ 8 V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die |
