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HerstellerCRMIKRO
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Herstellerteil #CRSS063N08N
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Datenblatt CRSS063N08N DataSheet
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Auf Lager26973
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Spezifikationen
| Attribut | Wert |
| Manufacturer | CRMICRO |
| Package / Case | TO-263 |
| Current - Continuous Drain(Id) | 80A |
| Pd - Power Dissipation | 164W |
| Drain to Source Voltage (Vdss) | 85V |
| Rds(on) | 6.3mΩ@10V,50A |
| Gate Threshold Voltage (Vgs(th) @ Id) | 4V |
| Type | 1 N-channel |
Übersicht
Description
For instance, if CRSS063N08N is related to an electronic component, it might refer to a specific type of semiconductor, such as a transistor or integrated circuit, with particular electrical characteristics like voltage or current ratings. These identifiers help manufacturers, engineers, and technicians accurately source and utilize the correct components in their designs or repairs.
If this code pertains to a standard or protocol, it could involve guidelines or specifications that need to be followed in certain technical applications, ensuring compatibility and uniformity across products and services.
For precise information, specific context or a related document would be necessary, often available through technical datasheets, industry catalogs, or official standardization bodies.
Equivalent
1. IRFZ44N - Similar voltage and current ratings.
2. STP80NF55 - Comparable performance in a similar package.
3. NTP5864NL - Matches in terms of voltage and current characteristics.
Always verify the datasheet for exact compatibility concerning pin configuration and electrical characteristics.
Features
1. N-Channel MOSFET: It is an N-channel device, meaning it conducts when a positive voltage is applied to the gate relative to the source.
2. Voltage and Current Ratings: Typically, it can handle a maximum drain-source voltage (V_DS) and continuous drain current (I_D) specific to the model specifications. It's important to check the datasheet for exact values.
3. R_DS(on) Resistance: It has a low on-state resistance, ensuring efficient conduction with minimal power loss.
4. Fast Switching Speeds: Suitable for high-speed applications due to rapid switching capabilities.
5. Thermal Performance: Often comes with good thermal management features, such as a suitable package that dissipates heat effectively.
6. Robust Design: Usually includes features for robust operation, such as avalanche and ESD protection.
These features make the CRSS063N08N ideal for use in power management, motor drivers, and various switching applications in electronics. Always refer to the manufacturer's datasheet for precise specifications and applications.
Pinout
1. Gate (G): Controls the flow of current between the drain and source.
2. Source (S): The terminal through which the current enters the MOSFET.
3. Drain (D): The terminal through which the current exits the MOSFET.
4. Kelvin Source (KS): Provides a separate reference for the gate drive return path, allowing more accurate gate control.
5. Other Pins: Often connected internally to the source or left unconnected, depending on the design to improve thermal performance or mechanical stability.
The CRSS063N08N is designed for high-efficiency power conversion applications, leveraging silicon carbide (SiC) technology for improved performance over traditional silicon MOSFETs. It is particularly known for its low on-resistance and high-speed switching capabilities.
Manufacturer
Application
1. DC-DC converters, owing to its low on-resistance and fast switching capabilities.
2. Motor control systems, where it provides efficient control over motor functions.
3. Power supplies, including adapters and chargers, for efficient voltage regulation.
4. Battery management systems, enhancing charging and discharging processes.
5. Automotive electronics, where robust performance is crucial under varying conditions.
Its high current handling and low thermal resistance make it suitable for high-performance and compact electronic devices.