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CSD13385F5
+StücklisteMOSFET N-CH 12V 4.3A 3PICOSTAR
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HerstellerTexas Instruments
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Herstellerteil #CSD13385F5
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Auf Lager8370
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Series | FemtoFET™ |
| Part Status | Active |
| Base Product Number | CSD13385 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12 V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 900mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 4.5 V |
| Vgs (Max) | 8V |
| Input Capacitance (Ciss) (Max) @ Vds | 674 pF @ 6 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 3-PICOSTAR |
| Package / Case | 3-SMD, No Lead |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Übersicht
Description
For example, if it pertains to a computer science course, it might include topics like programming basics, algorithms, and data structures. Alternatively, if it's related to data science, it may cover data analysis, statistics, and machine learning fundamentals.
The course would likely involve a combination of lectures, practical assignments, and projects to provide hands-on experience. Students would be expected to engage with course materials, participate in discussions, and complete assessments to demonstrate their understanding of the subject.
For specific details, such as prerequisites or learning outcomes, it is best to consult the course syllabus or academic advisor.
Equivalent
Features
1. Low On-Resistance (Rds(on)): Offers minimal power loss and improved efficiency.
2. Low Gate Charge (Qg): Facilitates faster switching speeds, making it suitable for high-frequency applications.
3. High Voltage Rating: Capable of handling significant voltage levels, enhancing its versatility in various circuits.
4. Thermal Performance: Designed to manage heat effectively, improving reliability and lifespan in demanding applications.
5. Compact Package: Available in a small footprint, ideal for space-constrained designs.
6. Fast Switching Capability: Reduces transition losses, promoting energy efficiency in power supply circuits.
These features make the CSD13385F5 suitable for applications such as DC-DC converters, motor drives, and power management systems in consumer electronics and industrial equipment.
Pinout
1. Gate1 (G1) - Controls the first MOSFET.
2. Source1 (S1) - Source terminal of the first MOSFET.
3. Drain1 (D1) - Drain terminal of the first MOSFET.
4. Gate2 (G2) - Controls the second MOSFET.
5. Source2 (S2) - Source terminal of the second MOSFET.
6. Drain2 (D2) - Drain terminal of the second MOSFET.
7. Common Source (CS) - Common connection for both source terminals.
8. Thermal Pad (TP) - A thermal pad for heat dissipation, typically connected to ground.
This device is characterized by low on-resistance and fast switching speeds, making it suitable for efficient power management.
Manufacturer
The CSD13385F5 specifically is a Power MOSFET, which is a type of transistor used for switching and amplifying electronic signals in power applications. TI is known for its innovation and reliability in the semiconductor market, supplying components that are critical for efficient power management and energy conservation in electronic devices. The company also emphasizes research and development, continuously advancing technologies to meet the evolving needs of its customers globally.
Application
1. DC-DC Converters: Used in buck or boost converters for efficient voltage regulation.
2. Power Supply Circuits: Enhances efficiency and thermal performance in power supplies.
3. Battery Management Systems: Facilitates switching in charging and discharging processes.
4. Motor Control: Utilized in driving motors in various devices.
5. Load Switching: Acts as an electronic switch in various electronic circuits.
Its low R_DS(on) and high-speed switching capabilities make it suitable for these applications.