CSD16409Q3

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CSD16409Q3

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MOSFET N-CH 25V 15A/60A 8VSON

  • HerstellerTexas Instruments

  • Herstellerteil #CSD16409Q3

  • Paket TDFN-8

  • Auf Lager6361

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Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series NexFET™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain(Id) @ 25°C 15A (Ta), 60A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 8.2mOhm @ 17A, 10V
Vgs(th)(Max) @ Id 2.3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 5.6 nC @ 4.5 V
Vgs(Max) +16V, -12V
Input Capacitance(Ciss)(Max) @ Vds 800 pF @ 12.5 V
Power Dissipation (Max) 2.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-VSONP (5x6)

Übersicht

Equivalent

The CSD16409Q3 is a 30V N-channel NexFET power MOSFET. Equivalent alternatives include:
- SiSS14DN (Vishay)
- DMN3010LSS (Diodes Inc.)
- BSC093N03LS (Infineon)
- AO3400A (Alpha & Omega)
Check datasheets for exact specs like RDS(on), current rating, and package compatibility before substitution.

Features

The CSD16409Q3 is a 30V N-channel NexFET power MOSFET from Texas Instruments, designed for high-efficiency power applications. Key features include:
- Low On-Resistance (RDS(on)): 1.8 mΩ (max) at VGS = 10V, reducing conduction losses.
- High Current Handling: 100A continuous drain current (ID).
- Fast Switching: Optimized for high-frequency applications (e.g., DC-DC converters, motor drives).
- Low Gate Charge (QG): 63nC (typ), improving switching efficiency.
- Thermal Performance: Low thermal resistance (RθJA = 40°C/W) in a 5mm x 6mm SON package.
- Avalanche Rated: Robust against inductive load spikes.
Ideal for synchronous rectification, power tools, and server power supplies. Combines high power density with thermal reliability.

Pinout

The CSD16409Q3 is a 5-pin dual N-channel MOSFET in a SON 2x2 package.
Pin Functions:
1. Pin 1 (Drain 1): Drain of the first MOSFET.
2. Pin 2 (Gate 1 & Gate 2): Common gate for both MOSFETs.
3. Pin 3 (Source 1 & Source 2): Common source for both MOSFETs.
4. Pin 4 (Gate 1 & Gate 2): Same as Pin 2 (internally connected).
5. Pin 5 (Drain 2): Drain of the second MOSFET.
Key Features:
- Dual N-channel design for compact power switching.
- Low RDS(on) for efficient power handling.
- Optimized for high-frequency applications (e.g., DC-DC converters).

Application

The CSD16409Q3 is a dual N-channel MOSFET used in power management applications. Key areas include:
1. DC-DC Converters – Efficient voltage step-down/step-up in power supplies.
2. Load Switching – Controls power distribution in portable devices (e.g., smartphones, tablets).
3. Motor Drivers – Manages power in small motors (e.g., drones, robotics).
4. Battery Protection – Prevents overcurrent/overvoltage in battery packs.
5. LED Drivers – Regulates current in lighting systems.
Its compact DFN package and low RDS(on) make it ideal for space-constrained, high-efficiency designs.

Package

The CSD16409Q3 is a PowerPAK® SO-8 package. This surface-mount package is optimized for high-power applications, offering low thermal resistance and efficient heat dissipation. It features a compact design with exposed pads for improved thermal performance, making it suitable for power MOSFETs in space-constrained applications.

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