CSD17576Q5B

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CSD17576Q5B

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MOSFET N-CH 30V 100A 8VSON

  • HerstellerTexas Instruments

  • Herstellerteil #CSD17576Q5B

  • Paket TDFN-8

  • Auf Lager2263

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Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Series NexFET™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 100A (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 2mOhm @ 25A, 10V
Vgs(th)(Max) @ Id 1.8V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 68 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 4430 pF @ 15 V
Power Dissipation (Max) 3.1W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-VSONP (5x6)

Übersicht

Description

The CSD17576Q5B is a 30V N-channel NexFET™ power MOSFET from Texas Instruments (TI). It features low on-resistance (RDS(on)) and high current handling (up to 60A), making it ideal for high-efficiency power switching in applications like DC-DC converters, motor drives, and load switches.
Key specs:
- VDSS: 30V
- ID: 60A (continuous)
- RDS(on): 1.7mΩ (max at VGS = 10V)
- Package: 5x6mm SON (Q5B) for compact designs.
Its optimized gate charge (QG) reduces switching losses, enhancing performance in high-frequency circuits. Designed for automotive and industrial use, it meets AEC-Q101 standards for reliability.
For detailed specs, refer to TI’s datasheet (SLVSDX1).

Equivalent

The CSD17576Q5B is a 30V N-channel MOSFET. Equivalent alternatives include:
- Infineon BSC093N04LS (30V, 9.3mΩ)
- Vishay SiR626DP (30V, 7.5mΩ)
- ON Semiconductor NVMFS5C404NL (40V, 4mΩ)
- TI CSD17573Q5B (30V, 8.8mΩ, similar series)
Check datasheets for exact specs like RDS(on), current rating, and package compatibility.

Pinout

The CSD17576Q5B is a N-channel MOSFET in a 5-pin (SON) 5x6mm package.
Pin Functions:
1. Gate (G) – Controls the switching.
2. Drain (D1, D2, D3) – Three drain pins for lower resistance and better thermal performance (internally connected).
4. Source (S) – Output/return path.
Key Features:
- 30V drain-source voltage (VDS)
- 60A continuous current (ID)
- Low RDS(on) (1.7mΩ max at VGS=10V)
- Optimized for high-efficiency power conversion (e.g., DC-DC, motor drives).
The multiple drain pins enhance current handling and heat dissipation.

Manufacturer

The CSD17576Q5B is a power MOSFET manufactured by Texas Instruments (TI). TI is a leading global semiconductor company specializing in analog and embedded processing technologies. Known for its innovation, TI produces a wide range of components, including integrated circuits, power management solutions, and sensors, serving industries like automotive, industrial, and consumer electronics. The company is headquartered in Dallas, Texas, and is renowned for its high-performance, reliable products.

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