CSD18501Q5A

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CSD18501Q5A

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MOSFET N-CH 40V 22A/100A 8VSON

  • HerstellerTexas Instruments

  • Herstellerteil #CSD18501Q5A

  • Paket TDFN-8

  • Auf Lager2226

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Spezifikationen

Attribut Wert
Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series NexFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 22A (Ta), 100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 3.2mOhm @ 25A, 10V
Vgs(th)(Max)@Id 2.3V @ 250µA
GateCharge(Qg)(Max)@Vgs 50 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3840 pF @ 20 V
PowerDissipation(Max) 3.1W (Ta), 150W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-VSONP (5x6)

Übersicht

Description

The CSD18501Q5A is a 40V, single N-channel NexFET power MOSFET from Texas Instruments. It features a low on-resistance (RDS(on)) of 2.3 mΩ (max at VGS = 4.5V) and a continuous drain current (ID) of 100A, making it ideal for high-efficiency power applications like DC/DC converters, motor drives, and load switches.
Key specifications:
- Voltage Rating (VDS): 40V
- Current (ID): 100A (continuous)
- RDS(on): 2.3 mΩ (max @ VGS = 4.5V)
- Package: SON 5x6mm (DQN)
Its small form factor, low gate charge (QG), and fast switching performance enhance thermal efficiency and power density in space-constrained designs. The device is optimized for 12V–24V systems, including automotive and industrial applications.
For detailed specs, refer to the [TI datasheet](https://www.ti.com/product/CSD18501Q5A).

Equivalent

Equivalent products to the CSD18501Q5A (a 60V, 5.3mΩ N-channel MOSFET by Texas Instruments) include:
- Infineon IPD90N04S4 (40V, 4.5mΩ)
- Vishay SiR476DP (60V, 5.1mΩ)
- ON Semiconductor NTMFS5C628NL (60V, 5.2mΩ)
- STMicroelectronics STL160N6F7 (60V, 5.6mΩ)
Check datasheets for exact compatibility in your application.

Pinout

The CSD18501Q5A is a N-channel MOSFET in a PowerPAK® SO-8 package.
- Pin Count: 8 pins (though some are internally connected for thermal/electrical performance).
- Function: Designed for high-efficiency power switching (e.g., DC-DC converters, motor drives).
- Pins 1, 5, 8: Drain (D) – connected internally.
- Pins 2, 3, 6, 7: Source (S) – connected internally.
- Pin 4: Gate (G) – controls switching.
Key specs:
- 30V drain-source voltage (VDS).
- 100A continuous current (ID).
- Low RDS(on) (1.7 mΩ max at 10V VGS).
Concise and optimized for power applications.

Application

The CSD18501Q5A is a 100V N-channel MOSFET by Texas Instruments, commonly used in:
1. Power Supplies – DC-DC converters, voltage regulators.
2. Motor Control – Brushed/brushless motor drives.
3. Automotive Systems – 12V/48V battery management, LED drivers.
4. Industrial Applications – Load switches, inverters.
5. Consumer Electronics – Power management in devices.
Its low on-resistance (2.8mΩ) and high current handling (180A pulsed) make it efficient for high-power switching.

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