CSD19538Q2

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CSD19538Q2

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MOSFET N-CH 100V 14.4A 6WSON

  • HerstellerTexas Instruments

  • Herstellerteil #CSD19538Q2

  • Paket WDFN-6

  • Auf Lager1630

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Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series NexFET™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 14.4A (Ta)
Drive Voltage(Max Rds On Min Rds On) 6V, 10V
Rds On(Max) @ Id Vgs 59mOhm @ 5A, 10V
Vgs(th)(Max) @ Id 3.8V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 5.6 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 454 pF @ 50 V
Power Dissipation (Max) 2.5W (Ta), 20.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-WSON (2x2)

Übersicht

Description

The CSD19538Q2 is a high-performance N-channel MOSFET from Texas Instruments, designed for power management applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 1.8 mΩ at VGS = 10 V, reducing conduction losses.
- High Current Handling: Supports up to 100 A continuous drain current (ID).
- Fast Switching: Optimized for efficiency in DC-DC converters, motor drives, and load switches.
- Robust Package: 5 mm × 6 mm SON (QFN) with exposed pad for improved thermal performance.
- Wide Voltage Range: Rated for 40 V VDS, suitable for 12 V–24 V systems.
Ideal for automotive, industrial, and computing applications requiring high power density and thermal reliability. Check the datasheet for detailed specifications and application guidelines.

Equivalent

The CSD19538Q2 is a 100V N-channel MOSFET from Texas Instruments. Equivalent alternatives include:
- Infineon IPD90N04S4-04
- ON Semiconductor NTMFS5C628NL
- Vishay SiSS52DN
These offer similar specs (100V, low RDS(on), and Qg). Always verify datasheet compatibility for your application.

Pinout

The CSD19538Q2 is a N-channel MOSFET in a PowerPAK® SO-8 package.
- Pin Count: 8 pins (though some are internally connected for thermal and electrical performance).
- Key Functions:
- Pins 1, 2, 3 (Source): Connected to the source terminal.
- Pins 5, 6, 7, 8 (Drain): Connected to the drain terminal.
- Pin 4 (Gate): Controls the MOSFET switching.
Features:
- 60V Drain-Source Voltage (VDS)
- 100A Continuous Drain Current (ID)
- Low RDS(on) (1.7mΩ typical @ 10V VGS)
- Optimized for high-efficiency power switching (e.g., DC-DC converters, motor drives).

Application

The CSD19538Q2 is a 100V N-channel MOSFET by Texas Instruments, commonly used in:
1. Power Supplies – DC-DC converters, voltage regulation.
2. Motor Control – Brushed/BLDC motor drivers.
3. Automotive Systems – 12V/48V battery management, LED drivers.
4. Industrial Applications – Load switches, inverters.
5. Consumer Electronics – Efficient power management in devices.
Its low on-resistance (1.95mΩ) and high current handling (195A) make it ideal for high-efficiency, high-power applications.

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