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CSD23382F4
+StücklisteMOSFET P-CH 12V 3.5A 3PICOSTAR
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HerstellerTexas Instruments
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Herstellerteil #CSD23382F4
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Auf Lager5477
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Spezifikationen
| Attribut | Wert |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | FemtoFET™ |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 12 V |
| Current-ContinuousDrain(Id)@25°C | 3.5A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.8V, 4.5V |
| RdsOn(Max)@IdVgs | 76mOhm @ 500mA, 4.5V |
| Vgs(th)(Max)@Id | 1.1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 1.35 nC @ 6 V |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 235 pF @ 6 V |
| PowerDissipation(Max) | 500mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 3-PICOSTAR |
Übersicht
Equivalent
The CSD23382F4 is a 30V, 5.8mΩ dual N-channel MOSFET by Texas Instruments. Equivalent alternatives include:
- Infineon BSC014N04LS (40V, 1.4mΩ)
- ON Semiconductor NVTFS5C464N (40V, 4.6mΩ)
- Vishay SiSS52DN (30V, 5.2mΩ)
- STMicroelectronics STL160N4LF6 (40V, 1.6mΩ)
Check specs like voltage, RDS(on), and package (SON 5x6) for compatibility.
- Infineon BSC014N04LS (40V, 1.4mΩ)
- ON Semiconductor NVTFS5C464N (40V, 4.6mΩ)
- Vishay SiSS52DN (30V, 5.2mΩ)
- STMicroelectronics STL160N4LF6 (40V, 1.6mΩ)
Check specs like voltage, RDS(on), and package (SON 5x6) for compatibility.
Features
The CSD23382F4 is a 30V, 80mΩ N-channel MOSFET from Texas Instruments, optimized for high-efficiency power conversion. Key features:
- Low On-Resistance: 80mΩ (max) at VGS=4.5V, reducing conduction losses.
- Fast Switching: Low gate charge (Qg=8.5nC typical) for high-frequency applications.
- Small Footprint: 3.3mm x 3.3mm SON (5-pin) package, saving PCB space.
- Wide Voltage Range: Supports 1.8V to 10V gate drive, compatible with low-voltage controllers.
- High Current Handling: Up to 10A continuous drain current.
- Low Thermal Resistance: Improves heat dissipation.
Ideal for DC-DC converters, load switches, and motor control in portable electronics, servers, and industrial systems.
- Low On-Resistance: 80mΩ (max) at VGS=4.5V, reducing conduction losses.
- Fast Switching: Low gate charge (Qg=8.5nC typical) for high-frequency applications.
- Small Footprint: 3.3mm x 3.3mm SON (5-pin) package, saving PCB space.
- Wide Voltage Range: Supports 1.8V to 10V gate drive, compatible with low-voltage controllers.
- High Current Handling: Up to 10A continuous drain current.
- Low Thermal Resistance: Improves heat dissipation.
Ideal for DC-DC converters, load switches, and motor control in portable electronics, servers, and industrial systems.
Application
The CSD23382F4 is a high-performance N-channel MOSFET commonly used in:
1. Power Management – DC-DC converters, voltage regulators.
2. Motor Control – Brushed and brushless motor drives.
3. Load Switching – Power distribution in consumer electronics.
4. Battery Protection – Overcurrent/overvoltage protection in portable devices.
5. Automotive Systems – LED drivers, infotainment power circuits.
Its low on-resistance (RDS(on)) and high efficiency make it ideal for compact, energy-efficient designs.
1. Power Management – DC-DC converters, voltage regulators.
2. Motor Control – Brushed and brushless motor drives.
3. Load Switching – Power distribution in consumer electronics.
4. Battery Protection – Overcurrent/overvoltage protection in portable devices.
5. Automotive Systems – LED drivers, infotainment power circuits.
Its low on-resistance (RDS(on)) and high efficiency make it ideal for compact, energy-efficient designs.
Package
The CSD23382F4 is a PowerTrench MOSFET from Texas Instruments, available in a 5-pin DPAK (TO-252) surface-mount package. This package is compact, suitable for high-power applications, and features a thermally efficient design with an exposed pad for heat dissipation.
