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CSD25480F3
+StücklisteMOSFET P-CH 20V 1.7A 3PICOSTAR
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HerstellerTexas Instruments
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Herstellerteil #CSD25480F3
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Datenblatt CSD25480F3 DataSheet
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Auf Lager22821
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Spezifikationen
| Attribut | Wert |
| Supplier | Texas Instruments |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | FemtoFET™ |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 1.7A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 8V |
| Rds On(Max) @ Id Vgs | 132mOhm @ 400mA, 8V |
| Vgs(th)(Max) @ Id | 1.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.91 nC @ 4.5 V |
| Vgs(Max) | -12V |
| Input Capacitance(Ciss)(Max) @ Vds | 155 pF @ 10 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 3-PICOSTAR |
Übersicht
Description
Key specifications of the CSD25480F3 include a low on-resistance, which minimizes power loss and heat generation, and a high current handling capability, which is essential for demanding applications. It is commonly used in DC-DC converters, load switches, and battery-powered devices, where efficiency and size are critical considerations. The MOSFET's fast switching speeds enhance performance in applications requiring rapid power transitions.
Overall, the CSD25480F3 is valued for its efficiency, compact size, and versatility, making it a popular choice among designers looking to optimize power management solutions in modern electronic systems.
Equivalent
1. Si2318DS by Vishay Siliconix
2. FDV301N by ON Semiconductor (now part of onsemi)
3. DMN2041L by Diodes Incorporated
Ensure that you compare the specifications like voltage, current, and package type to confirm compatibility with your application.
Features
1. Voltage Rating: It offers a drain-to-source voltage (V_DS) capability of 20V, making it suitable for low-voltage applications.
2. Current Handling: The MOSFET can handle a continuous drain current (I_D) up to 12.3A at 25°C.
3. On-Resistance: It boasts a low on-resistance (R_DS(on)) of approximately 13.4 mΩ, minimizing conduction losses and improving efficiency.
4. Fast Switching: Designed for high-speed switching, it reduces switching losses in circuits.
5. Thermal Performance: The package design ensures good thermal performance, allowing effective heat dissipation.
6. Low Gate Charge: This feature ensures reduced driving requirements and improves overall efficiency.
7. Applications: Commonly used in DC-DC converters, power management, load switching, and other applications requiring efficient power handling.
These features make the CSD25480F3 a versatile and reliable choice for various electronic applications.
Pinout
1. Gate (G): The gate terminal controls the MOSFET's on/off state. Applying a voltage to the gate allows current to flow between the other two terminals.
2. Drain (D): The drain is the terminal through which current flows when the MOSFET is in the 'on' state.
3. Source (S): The source is the terminal through which current exits the MOSFET.
This MOSFET is designed for low-voltage applications and is characterized by its low on-resistance, making it suitable for load switching, DC-DC conversion, and other power management tasks.
Manufacturer
Application
1. DC-DC Converters: Utilized in buck converters and boost converters for voltage regulation.
2. Load Switching: Ideal for switching applications in power management circuits.
3. Battery Protection: Used in battery management systems to ensure safe operation.
4. Portable Electronics: Suitable for power management in smartphones, tablets, and laptops.
5. LED Drivers: Helps in controlling power to LED lighting systems.
6. Motor Drives: Applied in small motor control and drive circuits.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities, which enhance overall efficiency.