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CSD25481F4
+StücklisteMOSFET P-CH 20V 2.5A 3PICOSTAR
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HerstellerTexas Instruments
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Herstellerteil #CSD25481F4
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Datenblatt CSD25481F4 DataSheet
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Auf Lager5018
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Texas Instruments |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 2.5A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 4.5V |
| Rds On(Max) @ Id Vgs | 88mOhm @ 500mA, 8V |
| Vgs(th)(Max) @ Id | 1.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.913 nC @ 4.5 V |
| Vgs(Max) | -12V |
| Input Capacitance(Ciss)(Max) @ Vds | 189 pF @ 10 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 3-PICOSTAR |
Übersicht
Description
Key specifications of the CSD25481F4 include a low on-resistance (Rds(on)) which minimizes power loss and improves system efficiency, and fast switching speeds, making it ideal for high-frequency applications. It typically operates in power management systems, DC-DC converters, and load switch applications. The device is built to handle a maximum voltage of 20V and a continuous drain current that suits medium power applications.
Its compact size, thermal performance, and efficiency make the CSD25481F4 a popular choice in modern electronics where space-saving and thermal management are crucial.
Equivalent
1. NXP Semiconductor PMV56XP.
2. Vishay Siliconix Si2305DS.
3. ON Semiconductor NTJS3151P.
Ensure compatibility by checking the specific electrical characteristics and packaging of these components relative to the CSD25481F4.
Features
1. N-Channel MOSFET: It is typically used for switching applications in electronic circuits.
2. Small Package Size: Available in a very compact package (SuperSONIC 1x1 mm), facilitating space-saving designs.
3. Low On-Resistance: Offers low RDS(on) which minimizes conduction losses, improving efficiency.
4. Fast Switching: Supports rapid switching speeds, crucial for high-frequency applications.
5. Thermal Performance: Designed to handle thermal management effectively, improving reliability in high-power applications.
6. Voltage and Current Ratings: Typically supports a maximum drain-source voltage and continuous drain current appropriate for its size and application type.
7. Applications: Often used in portable electronics, DC-DC converters, load switching, and other power management applications.
These features make the CSD25481F4 a versatile and efficient choice for designers requiring compact and reliable MOSFET solutions.