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CY62167DV30LL-55BVXI
+StücklisteSTANDARD SRAM, 1MX16, 55NS, CMOS
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HerstellerCypress Semiconductor Corp.
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Herstellerteil #CY62167DV30LL-55BVXI
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Auf Lager6360
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
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Spezifikationen
| Attribut | Wert |
| Series | MOBL™ |
| Part Status | Active |
| Digi Key Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 16Mbit |
| Memory Organization | 1M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 55ns |
| Voltage - Supply | 2.2V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-VFBGA |
| Supplier Device Package | 48-VFBGA (8x9.5) |
| Base Product Number | CY62167 |
| Access Time | 55 ns |
Übersicht
Description
This device is designed for low power consumption, with standby currents as low as 2 µA, making it ideal for applications requiring efficiency and extended battery life. It is equipped with automatic power-down features to further conserve energy when not in use. The chip comes in a 48-ball Very Fine Pitch Ball Grid Array (VFBGA) package, which aids in minimizing board space and facilitating high-density designs.
CY62167DV30LL-55BVXI is often used in applications like embedded systems, industrial control systems, and telecommunications equipment, where reliable and efficient memory storage is crucial.
Equivalent
1. ISSI IS62WV51216BLL - A 16Mb (512K x 16) low power SRAM.
2. Alliance Memory AS6C8016 - A 16Mb (512K x 16) CMOS SRAM.
3. Renesas R1LV1616 Series - 16Mb SRAM options with low power consumption.
When selecting equivalents, verify electrical characteristics, package type, and timing specifications match your requirements.
Features
1. Capacity and Organization: It offers a 16 Mb memory organized as 1M x 16 bits.
2. Low Power Consumption: Designed for low power applications, it operates with a low standby current.
3. Power Supply: Operates on a single 2.2V to 3.6V power supply, making it suitable for battery-operated devices.
4. Access Time: Features a fast access time of 55 ns, ensuring quick data retrieval.
5. Temperature Range: Supports an industrial temperature range from -40°C to +85°C, suitable for various environments.
6. Packaging: Available in a 48-ball VFBGA package, which aids in efficient use of board space.
7. Data Retention: Capable of data retention at a voltage as low as 1.5V.
These features make the CY62167DV30LL-55BVXI ideal for applications requiring reliable and fast memory performance with low power consumption, such as portable and embedded systems.
Pinout
The CY62167DV30LL-55BVXI comes in a 48-pin TSOP I package. Here’s a brief overview of its key functions and pin configuration:
- Data Inputs/Outputs (I/O0-I/O7): These 8 pins are used for data input and output.
- Address Inputs (A0-A20): These 21 pins are used to select the address locations within the memory.
- Chip Enable (CE1 and CE2): These pins enable or disable the chip.
- Write Enable (WE): This pin controls the writing operations.
- Output Enable (OE): This pin controls the data output buffers.
- Power Supply (VCC): Provides the power supply to the device.
- Ground (VSS): The ground reference for the device.
- Byte High Enable (BHE) and Byte Low Enable (BLE): These pins enable the high and low byte access during data transfer.
This SRAM is typically used in applications requiring high-speed data access and low power consumption.