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DMG6602SVT-7
+StücklisteMOSFET N/P-CH 30V TSOT23-6
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HerstellerDioden Incorporated
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Herstellerteil #DMG6602SVT-7
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Datenblatt DMG6602SVT-7 DataSheet
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Paket SOT-26-6
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Auf Lager2283
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Not For New Designs |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain(Id) @ 25°C | 3.4A, 2.8A |
| Rds On(Max) @ Id Vgs | 60mOhm @ 3.1A, 10V |
| Vgs(th)(Max) @ Id | 2.3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 13nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 400pF @ 15V |
| Power - Max | 840mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Übersicht
Description
- Frequency Range: DC to 67 GHz
- Low Insertion Loss: <1.5 dB (typical)
- High Isolation: >60 dB (typical)
- Fast Switching Speed: <10 ms
- Compact & Rugged: Suitable for test systems, aerospace, and defense
It supports SPDT (Single Pole Double Throw) switching via TTL or USB control, ensuring reliable signal routing in 5G, SATCOM, and radar systems.
For detailed specs, refer to the datasheet or manufacturer documentation.
Equivalent
- SiA936DJ-T1-GE3 (Vishay)
- DMN2019LSN-7 (Diodes Inc.)
- BSS138DW-7 (Diodes Inc.)
- 2N7002DW (ON Semiconductor)
These alternatives offer comparable specifications for switching applications. Always verify pin compatibility and electrical characteristics for your specific design.
Features
- Voltage Rating: 60V
- Current Rating: 60A (continuous)
- Low On-Resistance (RDS(on)): 7.0 mΩ (max) @ VGS = 10V
- Fast Switching: Optimized for high-speed applications
- Gate Charge (Qg): 48nC (typical) for efficient switching
- Avalanche Energy Rated: Robust against voltage spikes
- Package: TO-263-7 (D2PAK), suitable for power applications
- Low Gate Drive: Compatible with 4.5V drive (VGS(th) = 2V typical)
Ideal for DC-DC converters, motor control, and power management in automotive/industrial systems.
Pinout
Key Functions:
- Dual N-channel MOSFETs (two independent MOSFETs in one package).
- Low on-resistance (RDS(on)) for efficient power switching.
- High current handling (typically used in power management, DC-DC converters, and load switching).
- Logic-level gate drive (compatible with 3.3V/5V controllers).
Pinout (simplified):
- Pins 1, 3, 5, 7: Drain terminals (D1, D2).
- Pins 2, 4: Gate terminals (G1, G2).
- Pins 6, 8: Source terminals (S1, S2).
Common applications include battery protection, motor control, and power distribution.
