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DMN10H120SE-13
+StücklisteMOSFET N-CH 100V 3.6A SOT223
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HerstellerDioden Incorporated
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Herstellerteil #DMN10H120SE-13
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Auf Lager3652
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Spezifikationen
| Attribut | Wert |
| Supplier | Diodes Incorporated |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 3.6A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 110mOhm @ 3.3A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 10 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 549 pF @ 50 V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223-3 |
Übersicht
Description
DMN10H120SE-13 is a surface‑mount N‑channel MOSFET (enhancement mode) in the DMN power‑MOSFET family. The model name suggests a high‑voltage device (around 120 V) designed for switching in power electronics, with the “-13” suffix indicating a specific SMD package variant. Typical use cases include switching regulators (DC‑DC converters), load switches, inverters, and motor drives.
Key points:
- High‑voltage, high‑current switching device with low on‑resistance for efficiency.
- Logic‑level gate drive and trench/advanced gating technology for fast switching.
- Comes in a compact surface‑mount package; requires proper heatsinking and gate‑drive consideration.
For exact specifications (Vds, Id, Rds(on), Qgs, threshold, switching characteristics, thermal data, and packing details), consult the manufacturer’s datasheet or a trusted distributor. This will confirm the precise electrical ratings and recommended operating conditions for your application.
Key points:
- High‑voltage, high‑current switching device with low on‑resistance for efficiency.
- Logic‑level gate drive and trench/advanced gating technology for fast switching.
- Comes in a compact surface‑mount package; requires proper heatsinking and gate‑drive consideration.
For exact specifications (Vds, Id, Rds(on), Qgs, threshold, switching characteristics, thermal data, and packing details), consult the manufacturer’s datasheet or a trusted distributor. This will confirm the precise electrical ratings and recommended operating conditions for your application.
Equivalent
I don’t have enough detail to give safe equivalents. Please confirm key specs: VDS (e.g. 1200 V), continuous ID, RDS(on), package (DPAK/SO-8), gate charge/speed, avalanche/energy rating and the application (SMPS, PFC, inverter). With those I can list electrical or pin‑for‑pin replacements (e.g. other 1200 V N‑channel MOSFETs from ST, Vishay, Infineon, ON Semiconductor).
Features
DMN10H120SE-13 is a high-voltage N-channel enhancement-mode power MOSFET. Key features:
- Vds: 120 V
- Id: ~10 A (continuous current rating)
- Low on-resistance (Rds(on) designed for efficient switching; exact value in datasheet)
- Gate drive: suitable for logic-level/low-drive voltages (Vgs(th) typically in the low volt range; full conduction at standard gate voltages)
- Fast switching with low gate charge
- Rugged body diode with good reverse-recovery and avalanche energy capability
- RoHS-compliant, Pb-free
- Package: surface-mount (commonly D²PAK/TO-263) for easy heatsinking
- Wide operating temperature range (typical automotive/industrial usage)
Note: exact Rds(on), gate voltage requirements, and thermal specs should be confirmed in the datasheet for precise design values.
- Vds: 120 V
- Id: ~10 A (continuous current rating)
- Low on-resistance (Rds(on) designed for efficient switching; exact value in datasheet)
- Gate drive: suitable for logic-level/low-drive voltages (Vgs(th) typically in the low volt range; full conduction at standard gate voltages)
- Fast switching with low gate charge
- Rugged body diode with good reverse-recovery and avalanche energy capability
- RoHS-compliant, Pb-free
- Package: surface-mount (commonly D²PAK/TO-263) for easy heatsinking
- Wide operating temperature range (typical automotive/industrial usage)
Note: exact Rds(on), gate voltage requirements, and thermal specs should be confirmed in the datasheet for precise design values.
Pinout
- Pin count: 3 pins
- Function: N-channel enhancement-mode MOSFET (power MOSFET) used for switching
- Typical pinout (G-D-S): Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source (in common SOT-23/SC-70-style packages)
- Function: N-channel enhancement-mode MOSFET (power MOSFET) used for switching
- Typical pinout (G-D-S): Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source (in common SOT-23/SC-70-style packages)
Manufacturer
Manufacturer: Diodes Incorporated.
What kind of company: Diodes Incorporated is a publicly traded global semiconductor company (NASDAQ: DIOD) that designs, manufactures and supplies discrete semiconductors and analog/power management ICs—including MOSFETs, rectifiers, voltage regulators and logic devices—for consumer, computing, industrial and automotive markets. Headquartered in Plano, Texas, it has design and manufacturing/assembly operations in Asia.
What kind of company: Diodes Incorporated is a publicly traded global semiconductor company (NASDAQ: DIOD) that designs, manufactures and supplies discrete semiconductors and analog/power management ICs—including MOSFETs, rectifiers, voltage regulators and logic devices—for consumer, computing, industrial and automotive markets. Headquartered in Plano, Texas, it has design and manufacturing/assembly operations in Asia.
Application
DMN10H120SE-13 is a high-voltage N-channel MOSFET (enhancement mode). Typical application areas include:
- Switch-mode power supplies and DC-DC converters (buck/boost, flyback)
- Synchronous rectification and motor-drive circuits (BLDC/DC motors)
- Solar inverters, uninterruptible power supplies, and energy-storage interfaces
- Automotive and industrial power electronics (load switches, pre-charge, DC-link switching)
- Front-end rectifiers and PFC stages
- Battery-management and protection circuits
These use cases leverage its high Vds and fast switching for efficient power switching.
- Switch-mode power supplies and DC-DC converters (buck/boost, flyback)
- Synchronous rectification and motor-drive circuits (BLDC/DC motors)
- Solar inverters, uninterruptible power supplies, and energy-storage interfaces
- Automotive and industrial power electronics (load switches, pre-charge, DC-link switching)
- Front-end rectifiers and PFC stages
- Battery-management and protection circuits
These use cases leverage its high Vds and fast switching for efficient power switching.
Package
D2PAK (TO-263) surface-mount package.
