DRV5013ADQDBZR

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DRV5013ADQDBZR

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MAGNETIC SWITCH LATCH SOT23-3

  • HerstellerTexas Instruments

  • Herstellerteil #DRV5013ADQDBZR

  • Paket SOT-23-3

  • Auf Lager3195

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Spezifikationen

Attribut Wert
Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
Function Latch
Technology Hall Effect
Polarization South Pole
SensingRange 5mT Trip, -5mT Release
TestCondition -40°C ~ 125°C
Voltage-Supply 2.7V ~ 38V
Current-Supply(Max) 2.7mA (Typ)
Current-Output(Max) 30mA
OutputType Open Drain
Features Temperature Compensated
OperatingTemperature -40°C ~ 125°C (TA)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3

Übersicht

Description

The DRV5013ADQDBZR is a Hall effect sensor manufactured by Texas Instruments, designed for magnetic field detection. This device is particularly used in applications requiring precise position sensing and rotational or linear motion detection. The DRV5013A operates on a unipolar principle, meaning it responds to a single magnetic pole, simplifying design and enabling more straightforward integration into systems.
Key features include a wide operating voltage range, typically from 2.5V to 38V, making it suitable for various applications in automotive, industrial, and consumer electronics. The sensor offers high sensitivity and stability over temperature and time, ensuring reliable performance in different environments.
Available in a compact, surface-mount package, the DRV5013ADQDBZR supports efficient use in space-constrained designs. It provides a digital output, making it easy to interface with microcontrollers and other digital circuitry. Additionally, its low power consumption is beneficial for battery-powered applications, extending operation time.
Overall, the DRV5013ADQDBZR is a versatile, high-performance sensor ideal for various magnetic sensing applications.

Equivalent

The DRV5013ADQDBZR is a Hall effect sensor produced by Texas Instruments. Equivalent products from other manufacturers might include:
1. Allegro MicroSystems A1101: Similar Hall effect switch.
2. Infineon TLE4905: Hall effect switch with similar function.
3. Melexis MLX90248: Hall effect latch/switch.
When choosing an equivalent, ensure that parameters like sensitivity, voltage range, and package type match your specific application requirements. Always consult the datasheets for precise compatibility.

Features

The DRV5013ADQDBZR is a Hall effect magnetic sensor from Texas Instruments. Key features include:
1. Magnetic Sensing: It detects the presence of a magnetic field to switch its output state, ideal for non-contact position sensing in various applications.

2. Omnipolar Operation: It responds to both north and south magnetic poles, simplifying magnet orientation requirements in applications.
3. Low Power Consumption: The device is designed for efficient power use, making it suitable for battery-operated devices.
4. Wide Supply Voltage Range: Operates from 2.5V to 38V, providing flexibility for different power supply conditions.
5. Fast Response Time: Rapid detection and response to changes in magnetic fields, suitable for high-speed applications.
6. Robust Design: Includes integrated protection features like reverse battery protection and output short-circuit protection.
7. Small Package: Comes in a compact SOT-23 package, allowing for space-constrained applications.
These features make the DRV5013ADQDBZR suitable for applications in automotive, industrial, and consumer electronics where reliable magnetic field detection is critical.

Pinout

The DRV5013ADQDBZR is a Hall effect sensor from Texas Instruments. It is packaged in a SOT-23 format and features a 3-pin configuration. The pin functions are as follows:
1. VCC (Pin 1): This is the power supply pin. It provides the necessary voltage to power the device, typically ranging from 2.5V to 38V.
2. GND (Pin 2): This is the ground pin. It serves as the reference point for the device's internal circuits and should be connected to the negative terminal of the power supply.
3. OUT (Pin 3): This is the output pin. It provides a digital output signal, which indicates the presence or absence of a magnetic field. The output can be either high or low, depending on the magnetic flux density detected by the sensor.
The DRV5013ADQDBZR is designed for use in applications such as position detection, speed sensing, and proximity sensing. It is particularly useful in environments where contactless magnetic sensors are required.

Manufacturer

The DRV5013ADQDBZR is manufactured by Texas Instruments (TI). Texas Instruments is a global technology company that designs and manufactures semiconductors and various integrated circuits, which are used in a wide array of electronic devices. TI is particularly known for its development of analog chips and embedded processors, which are integral to the functioning of electronics across numerous industries, including automotive, industrial, personal electronics, and communications equipment. The company is headquartered in Dallas, Texas, and has a significant presence in the semiconductor manufacturing sector.

Application

The DRV5013ADQDBZR is a digital Hall effect sensor used primarily for magnetic field detection applications. It is suitable for various applications including:
1. Position Sensing: Used in detecting the position of mechanical components, such as in automotive gear shifters or door latches.

2. Speed Sensing: Employed in monitoring rotational speed in motors, fans, and other rotating machinery.

3. Proximity Detection: Applied in security systems and consumer electronics for detecting the presence or absence of objects.

4. Level Detection: Utilized in fluid level sensing in tanks or containers.
5. End-of-Travel Detection: Used in robotics and automation to determine the end of a mechanical travel path.
Its wide operating voltage range and robust performance make it versatile for various industrial, automotive, and consumer applications.

Package

The DRV5013ADQDBZR is packaged in a SOT-23 format, which is a small-outline transistor package with three pins. This compact package is commonly used for surface-mount technology, making it suitable for applications requiring space-efficient designs.

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