DRV5015A1QDBZR

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DRV5015A1QDBZR

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MAGNETIC SWITCH LATCH SOT23-3

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Attribut Wert
Part Status Active
Function Latch
Technology Hall Effect
Polarization North Pole, South Pole
Sensing Range 2mT Trip, -2mT Release
Test Condition -40°C ~ 125°C
Voltage - Supply 2.5V ~ 5.5V
Current - Supply (Max) 2.8mA
Current - Output (Max) 30mA
Output Type Digital
Operating Temperature -40°C ~ 125°C
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number DRV5015

Übersicht

Description

The DRV5015A1QDBZR is a magnetic sensor IC, specifically a Hall-effect sensor, designed by Texas Instruments. It is used primarily for contactless magnetic detection and is suitable for applications requiring precise measurement of magnetic field changes. The device operates with a unipolar switch function, activating when a magnetic field of a certain threshold is detected and deactivating when the field falls below another threshold.
Key features of the DRV5015A1QDBZR include low power consumption, high sensitivity, and a small SOT-23 package, making it ideal for space-constrained applications. It operates over a wide voltage range (2.5V to 5.5V) and is designed to withstand harsh environmental conditions, with a typical operating temperature range from -40°C to 125°C.
The DRV5015A1QDBZR is suitable for various applications, including position sensing, speed detection, and motor control feedback systems. Its robust design and reliable performance make it a popular choice for automotive, industrial, and consumer electronics.

Equivalent

Equivalent products to the DRV5015A1QDBZR chip typically include other Hall-effect sensor ICs with similar features and specifications. Consider options like:
1. Allegro MicroSystems A1120
2. Melexis MLX90248
3. Infineon TLE4964-1M
4. Honeywell SS341RT
Always compare key specifications such as sensitivity, voltage range, and package type to ensure compatibility with your application.

Features

The DRV5015A1QDBZR is a Hall effect sensor known for its precision and reliability. Key features include:
1. Sensitivity: It is designed to detect magnetic fields, with a focus on precision, making it suitable for various applications like position sensing and speed detection.
2. Low Power Consumption: The sensor is optimized for efficiency, operating at low power levels, which is beneficial for battery-powered devices.
3. Wide Operating Voltage: It supports a broad range of supply voltages, typically enhancing its versatility across different systems.
4. Temperature Range: The sensor can operate effectively over a wide temperature range, ensuring reliability in different environmental conditions.
5. Output Type: It provides an easy-to-use digital output, which simplifies integration into systems and reduces the need for additional processing.
6. Compact Package: The sensor is housed in a small, surface-mount package, which is ideal for space-constrained applications.
These features make the DRV5015A1QDBZR suitable for applications in automotive, industrial, and consumer electronics where efficient and accurate magnetic field detection is required.

Pinout

The DRV5015A1QDBZR is a Hall effect sensor from Texas Instruments. It comes in a small SOT-23 package with a 3-pin configuration. Here is a concise description of its pin count and function:
1. Pin 1 (VCC): Power supply pin where the operating voltage is applied. It powers the internal circuitry of the sensor.
2. Pin 2 (GND): Ground pin, used to complete the electrical circuit for the device.
3. Pin 3 (OUT): Output pin that provides the digital output signal. This pin changes state depending on the presence and polarity of a magnetic field. When the magnetic field exceeds a certain threshold, the output switches from high to low or vice versa, depending on the sensor version.
The DRV5015A1QDBZR is designed to detect the presence of a magnetic field and is commonly used in applications like speed sensing, position sensing, and proximity detection. Its CMOS technology allows for low power consumption, making it suitable for battery-operated devices.

Manufacturer

The DRV5015A1QDBZR is manufactured by Texas Instruments (TI). TI is a global semiconductor company that designs and manufactures analog and embedded processing chips. These chips are integral to various electronic systems across industries, including automotive, industrial, personal electronics, communications equipment, and enterprise systems. Texas Instruments is known for its innovation in analog and digital signal processing technology and has a broad portfolio of products that support the development of electronic devices.

Application

The DRV5015A1QDBZR is a Hall effect sensor used primarily for detecting magnetic fields. Its application areas include:
1. Position Sensing: Accurately determines the position of rotary or linear components in industrial and consumer electronics.
2. Speed Detection: Monitors rotational speed in motors, fans, and gear systems.
3. Proximity Sensing: Detects the presence or absence of magnetic objects, useful in safety interlocks and security systems.
4. Current Sensing: Indirectly measures current by detecting magnetic fields generated by electrical conductors.
5. Automotive: Implemented in various automotive systems for position and speed sensing, like in the detection of crankshafts or camshafts.
These applications benefit from its low-power consumption and wide operating temperature range.

Package

The DRV5015A1QDBZR is a Hall-effect sensor by Texas Instruments. It comes in a SOT-23 package, which is a small-outline, surface-mount transistor package. This package type is compact and suitable for applications where space is limited.

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