DXTN10060DFJBQ-7

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DXTN10060DFJBQ-7

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TRANS NPN 60V 4A 3DFN

  • HerstellerDioden Incorporated

  • Herstellerteil #DXTN10060DFJBQ-7

  • Paket 3-UDFN Exposed Pad

  • Auf Lager7523

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Spezifikationen

Attribut Wert
Supplier Diodes Incorporated
Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
ProductStatus Active
TransistorType NPN
Current-Collector(Ic)(Max) 4 A
Voltage-CollectorEmitterBreakdown(Max) 60 V
VceSaturation(Max)@IbIc 320mV @ 200mA, 4A
Current-CollectorCutoff(Max) 100nA
DCCurrentGain(hFE)(Min)@IcVce 340 @ 200mA, 2V
Power-Max 1.8 W
Frequency-Transition 125MHz
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
Package/Case 3-UDFN Exposed Pad

Übersicht

Description

I couldn’t locate a public datasheet for DXTN10060DFJBQ-7 in my sources. It appears to be a part number for a power semiconductor (likely an N-channel MOSFET or IGBT) used in switching power electronics.
A typical introduction for such devices would note:
- It provides efficient on-state conduction with a specified Vds (drain‑to‑source voltage) and Id (continuous current).
- It has a defined Rds(on) (or equivalent on‑state resistance) and fast switching speeds.
- It includes protections such as gate threshold behavior, body diode considerations, and thermal/power limits.
- It’s offered in a power package (surface-mount or through-hole) and used in applications like DC‑DC converters, motor drivers, buck/boost converters, power supplies, and load switches.
For an accurate, detailed intro, please share the manufacturer or the datasheet, or confirm the exact type (MOSFET vs IGBT) and its rating.

Equivalent

I don’t have live access to part-index databases. Please provide the DXTN10060DFJBQ-7 datasheet or its key specs (device type, VDS, ID, RDS(on), gate charge, package). With those I can list close equivalents (same polarity, voltage/current ratings, similar RDS(on)/Qg and package) from major vendors.

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