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EPC2016
+StücklisteGANFET N-CH 100V 11A DIE
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HerstellerEPZ
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Herstellerteil #EPC2016
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Datenblatt EPC2016 DataSheet
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Spezifikationen
| Attribut | Wert |
| Supplier | EPC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | eGaN® |
| Part Status | Discontinued at Digi-Key |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 11A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V |
| Rds On(Max) @ Id Vgs | 16mOhm @ 11A, 5V |
| Vgs(th)(Max) @ Id | 2.5V @ 3mA |
| Gate Charge(Qg)(Max) @ Vgs | 5.2 nC @ 5 V |
| Vgs(Max) | +6V, -5V |
| Input Capacitance(Ciss)(Max) @ Vds | 520 pF @ 50 V |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die |
