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ES1BL M2G
+StücklisteDIODE GEN PURP 100V 1A SUB SMA
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HerstellerTaiwan Semiconductor Corporation
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Herstellerteil #ES1BL M2G
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Datenblatt ES1BL M2G DataSheet
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Paket DO-219AB
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Auf Lager8514
365 Tage Qualitätsgarantie
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Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Taiwan Semiconductor Corporation |
| Package | Tape & Reel (TR) |
| ProductStatus | Active |
| DiodeType | Standard |
| Voltage-DCReverse(Vr)(Max) | 100 V |
| Current-AverageRectified(Io) | 1A |
| Voltage-Forward(Vf)(Max)@If | 950 mV @ 1 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| ReverseRecoveryTime(trr) | 35 ns |
| Current-ReverseLeakage@Vr | 5 µA @ 100 V |
| Capacitance@VrF | 10pF @ 1V, 1MHz |
| MountingType | Surface Mount |
| Package/Case | DO-219AB |
| SupplierDevicePackage | Sub SMA |
