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ES1JLHRQG
+StücklisteDIODE GEN PURP 600V 1A SUB SMA
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HerstellerTaiwan Semiconductor Corporation
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Herstellerteil #ES1JLHRQG
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Datenblatt ES1JLHRQG DataSheet
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Paket DO-219AB
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Auf Lager9657
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Taiwan Semiconductor Corporation |
| Package / Case | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified(Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 1 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
| Capacitance @ Vr F | 8pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Supplier Device Package | Sub SMA |
