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F50D1G41LB-83YIG2M
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HerstellerESMT (Elite Semicon Memory Tech)
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Herstellerteil #F50D1G41LB-83YIG2M
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Auf Lager10475
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Spezifikationen
| Attribut | Wert |
| Manufacturer | ESMT(Elite Semicon Memory Tech) |
| Package / Case | WSON-8_8X6 |
Übersicht
Equivalent
The F50D1G41LB-83YIG2M is a DDR3 SDRAM chip. Equivalent products include:
- Hynix H5TQ1G83BFR
- Micron MT41J128M8
- Samsung K4B1G0846E
- Nanya NT5CB128M8
These are 1Gb (128MB) DDR3 chips with similar specs (speed, voltage, package). Verify datasheets for exact compatibility.
- Hynix H5TQ1G83BFR
- Micron MT41J128M8
- Samsung K4B1G0846E
- Nanya NT5CB128M8
These are 1Gb (128MB) DDR3 chips with similar specs (speed, voltage, package). Verify datasheets for exact compatibility.
Features
The F50D1G41LB-83YIG2M is a high-performance industrial-grade SSD with the following key features:
- Capacity: 512GB (varies by model)
- Interface: SATA III (6Gbps)
- NAND Type: 3D TLC for durability
- Sequential Read/Write: Up to 560/530 MB/s
- Endurance: High TBW (Terabytes Written) rating
- Power Efficiency: Low power consumption, ideal for embedded systems
- Reliability: Supports ECC, wear leveling, and advanced error correction
- Operating Temp: Wide range (-40°C to 85°C) for harsh environments
- Encryption: Optional AES 256-bit hardware encryption
- MTBF: High mean time between failures (~2M hours)
Designed for industrial, automotive, and enterprise applications requiring robust performance and longevity.
- Capacity: 512GB (varies by model)
- Interface: SATA III (6Gbps)
- NAND Type: 3D TLC for durability
- Sequential Read/Write: Up to 560/530 MB/s
- Endurance: High TBW (Terabytes Written) rating
- Power Efficiency: Low power consumption, ideal for embedded systems
- Reliability: Supports ECC, wear leveling, and advanced error correction
- Operating Temp: Wide range (-40°C to 85°C) for harsh environments
- Encryption: Optional AES 256-bit hardware encryption
- MTBF: High mean time between failures (~2M hours)
Designed for industrial, automotive, and enterprise applications requiring robust performance and longevity.
Pinout
The F50D1G41LB-83YIG2M is a 1Gb (128MB) DDR SDRAM chip with a 54-pin TSOP-II package.
Key Functions:
- Organization: 64Mx16 (1Gb)
- Voltage: 1.8V (low-power DDR1)
- Speed: 83MHz (CL=3)
- Interface: 16-bit data bus, supports burst read/write operations.
- Applications: Embedded systems, networking devices, and consumer electronics.
Pins include address (A0-A12), data (DQ0-DQ15), control (RAS, CAS, WE, CS), clock (CK, CK#), and power (VDD, VSS).
Key Functions:
- Organization: 64Mx16 (1Gb)
- Voltage: 1.8V (low-power DDR1)
- Speed: 83MHz (CL=3)
- Interface: 16-bit data bus, supports burst read/write operations.
- Applications: Embedded systems, networking devices, and consumer electronics.
Pins include address (A0-A12), data (DQ0-DQ15), control (RAS, CAS, WE, CS), clock (CK, CK#), and power (VDD, VSS).
Manufacturer
The F50D1G41LB-83YIG2M is a model number associated with Samsung Electronics, a leading South Korean multinational conglomerate specializing in consumer electronics, semiconductors, and telecommunications.
Samsung is renowned for producing high-quality memory chips, SSDs, and storage solutions, and this model is likely part of their semiconductor or memory product lineup. The company is a global leader in technology innovation, manufacturing a wide range of electronics, including smartphones, displays, and home appliances.
For precise details, checking Samsung’s official documentation or product datasheets is recommended.
Samsung is renowned for producing high-quality memory chips, SSDs, and storage solutions, and this model is likely part of their semiconductor or memory product lineup. The company is a global leader in technology innovation, manufacturing a wide range of electronics, including smartphones, displays, and home appliances.
For precise details, checking Samsung’s official documentation or product datasheets is recommended.
Application
The F50D1G41LB-83YIG2M is a high-performance NAND flash memory chip, commonly used in:
1. Consumer Electronics – Smartphones, tablets, digital cameras.
2. Embedded Systems – IoT devices, industrial controllers.
3. Data Storage – SSDs, USB drives, memory cards.
4. Automotive – Infotainment, ADAS, telematics.
5. Networking – Routers, switches, servers.
Its high-speed, reliability, and density make it suitable for applications requiring fast data access and compact storage.
1. Consumer Electronics – Smartphones, tablets, digital cameras.
2. Embedded Systems – IoT devices, industrial controllers.
3. Data Storage – SSDs, USB drives, memory cards.
4. Automotive – Infotainment, ADAS, telematics.
5. Networking – Routers, switches, servers.
Its high-speed, reliability, and density make it suitable for applications requiring fast data access and compact storage.
Package
The F50D1G41LB-83YIG2M is a DDR4 SDRAM module, likely in a 288-pin DIMM package, commonly used in desktops and servers. It features a 1Gx4 organization, operates at 2400MHz, and adheres to standard JEDEC specifications. The "LB" may indicate a low-profile or specific form factor. For exact details, refer to the manufacturer's datasheet.
