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FDC6303N
+StücklisteMOSFET 2N-CH 25V 0.68A SSOT6
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HerstellerOnsemi
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Herstellerteil #FDC6303N
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Spezifikationen
| Attribut | Wert |
| Part Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 680mA |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 2.3nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V |
| Power - Max | 700mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | SuperSOT™-6 |
| Base Product Number | FDC6303 |
Übersicht
Description
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of around 60A, and a low gate threshold voltage (V_GS(th)), which allows for easy driving by standard logic-level signals. Its compact package (usually in a TO-220 or similar format) facilitates efficient heat dissipation.
The FDC6303N is characterized by fast switching speeds, which enhance its performance in rapid on-off applications. Overall, it is a reliable and effective choice for engineers looking to optimize power efficiency in electronic designs.
Equivalent
Features
1. Voltage Rating: Typically rated for a maximum drain-source voltage (Vds) of 30V, making it suitable for low-voltage applications.
2. Current Rating: Capable of handling continuous drain currents up to 10A, depending on the thermal conditions.
3. Rds(on): Low on-state resistance (Rds(on)), typically around 10 mΩ at Vgs = 10V, ensuring minimal conduction losses.
4. Gate Threshold Voltage: A low gate threshold voltage (Vgs(th)) typically around 1-2V, allowing for efficient gate drive with low voltage levels.
5. Package: Available in a TO-220 or SO-8 package, facilitating easy integration into various designs.
6. Fast Switching: High-speed switching capabilities, making it ideal for applications in power management, DC-DC converters, and motor control.
7. Thermal Performance: Excellent thermal characteristics, allowing for effective heat dissipation.
Overall, the FDC6303N is a versatile MOSFET suitable for a range of electronic applications.
Pinout
1. Gate 1 (G1) - Controls the first MOSFET.
2. Source 1 (S1) - Source terminal for the first MOSFET.
3. Drain 1 (D1) - Drain terminal for the first MOSFET.
4. Gate 2 (G2) - Controls the second MOSFET.
5. Source 2 (S2) - Source terminal for the second MOSFET.
6. Drain 2 (D2) - Drain terminal for the second MOSFET.
7. Drain 3 (D3) - Common drain for both MOSFETs or an additional function depending on the configuration.
8. Source 3 (S3) - Common source for both MOSFETs or an additional function depending on the configuration.
The FDC6303N is commonly used in applications such as power management, switching circuits, and as a low-side switch in power converters. It features low on-resistance and fast switching times, making it suitable for efficient power designs. Always refer to the specific datasheet for detailed pin configurations and specifications.
Manufacturer
Application
1. DC-DC Converters: Used in step-down and step-up converters for efficient power conversion.
2. Power Supply Units: Suitable for switching power supplies in consumer electronics and industrial equipment.
3. Motor Drivers: Ideal for controlling motors in robotics and automation.
4. Load Switching: Employed in switching loads in battery-powered devices and portable electronics.
5. LED Drivers: Utilized in driving LED lighting systems.
Its low on-resistance and fast switching capabilities make it suitable for high-efficiency applications.