FDC658P

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FDC658P

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SMALL SIGNAL FIELD-EFFECT TRANSI

  • HerstellerFairchild Halbleiter

  • Herstellerteil #FDC658P

  • Datenblatt FDC658P DataSheet

  • Auf Lager6184

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Spezifikationen

Attribut Wert
Supplier Rochester Electronics, LLC
Package Bulk
Series PowerTrench®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 4A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 50mOhm @ 4A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 12 nC @ 5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 750 pF @ 15 V
PowerDissipation(Max) 1.6W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SuperSOT™-6

Übersicht

Description

The FDC658P is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in electronic circuits for switching and amplification purposes. It is designed to handle various power applications due to its efficient current handling and low on-resistance. This component is particularly valued for its ability to operate at high speeds and its robustness in different environments.
The FDC658P typically comes in a compact package, making it suitable for applications where space is limited. It is used in a wide range of devices, including power regulators, motor controllers, and other consumer electronics. The efficient design of the FDC658P helps in minimizing power loss, making it an ideal choice for battery-operated devices where energy efficiency is critical.
Engineers and designers prefer the FDC658P for its reliability and performance in demanding applications. Understanding its specifications and integrating it into a design requires familiarity with electronic circuit design principles, making it essential for professionals working in electronics and electrical engineering fields.

Equivalent

The FDC658P is a dual P-channel MOSFET. Equivalent products include the Vishay Si4925DY, Nexperia 2P02L06, and ON Semiconductor FDD6688. These alternatives offer similar voltage and current ratings, making them suitable substitutes in applications requiring dual P-channel MOSFETs. Always verify specifications in the datasheet to ensure compatibility with your specific needs.

Features

The FDC658P is a dual N-channel MOSFET designed for use in portable applications. Key features include:
1. Low On-Resistance: It offers low R_DS(on), which ensures minimal power loss and efficient performance.
2. Compact Package: The device is housed in a small, space-saving SuperSOT-6 package, suitable for compact applications.
3. Fast Switching Speed: It provides quick switching capabilities, enhancing efficiency in high-speed applications.
4. Low Gate Charge: The MOSFET is designed with a low gate charge, reducing the drive requirements and power consumption.
5. Optimized for Battery Protection: It is ideal for battery protection circuits in portable devices, like smartphones and laptops.
6. Thermal Performance: The FDC658P offers efficient thermal management, making it suitable for high-density applications.
These features make the FDC658P an ideal choice for applications requiring high efficiency, compact size, and reliable performance in battery-operated devices.

Pinout

The FDC658P is a dual P-channel MOSFET. It typically comes in an 8-pin SOIC package. Here is a brief overview of its pin count and functions:
1. Pin Count: 8 pins
2. Functions:
- Source (S1, S2): These pins are the source terminals for each of the two P-channel MOSFETs.
- Gate (G1, G2): These pins are the gate terminals that control the turning on and off of the MOSFETs.
- Drain (D1, D2): These are the drain terminals for each of the two MOSFETs, where the main current flows from source to drain when the MOSFET is on.

Each MOSFET within the FDC658P operates independently, allowing for dual switching applications in compact spaces.

Manufacturer

The FDC658P is manufactured by ON Semiconductor, a company known for producing semiconductors. ON Semiconductor, now known as onsemi, is a leading provider of energy-efficient solutions, supplying a broad portfolio of semiconductor components that address design needs in computing, consumer electronics, communications, automotive, and industrial markets. Their portfolio includes power and signal management, logic, discrete, and custom devices.

Application

The FDC658P is a dual P-channel MOSFET, commonly used in applications requiring efficient switching and power management. Its application areas include:
1. Power Management: Used in DC-DC converters and voltage regulation modules due to its low on-resistance and fast switching capabilities.
2. Load Switching: Ideal for controlling power to loads in consumer electronics and industrial equipment.
3. Battery-Powered Devices: Provides efficient power control in battery-operated devices like smartphones and laptops.
4. Motor Control: Suitable for driving small motors in applications such as drones and robotics.
5. LED Drives: Used in LED lighting for dimming and power control.
Its compact package also makes it suitable for space-constrained designs.

Package

The FDC658P is a dual P-channel MOSFET typically packaged in an 8-pin SOIC (Small Outline Integrated Circuit) format, also known as SO-8. This surface-mount package is compact, allowing for efficient use in circuit designs where space is limited.

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