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FDD390N15ALZ
+StücklisteMOSFET N-CH 150V 26A DPAK
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HerstellerOnsemi
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Herstellerteil #FDD390N15ALZ
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Spezifikationen
| Attribut | Wert |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 26A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1760 pF @ 75 V |
| Power Dissipation (Max) | 63W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | FDD390 |
Übersicht
Description
The FDD390N15ALZ is a high-performance N-channel MOSFET designed for applications requiring efficient power management. It features a maximum drain-source voltage (V_DS) of 150V and a continuous drain current (I_D) rating of 39A at a specified temperature, making it suitable for high-voltage switching applications. The device offers low on-resistance (R_DS(on)), which enhances efficiency and minimizes power loss during operation.
This MOSFET is commonly used in power supplies, motor drivers, and other applications where reliable switching is critical. It has a fast switching speed, allowing it to handle high-frequency signals effectively. The FDD390N15ALZ is housed in a TO-220 package, providing adequate thermal dissipation for robust performance under load.
Overall, the FDD390N15ALZ is an excellent choice for designers seeking a reliable, efficient, and high-voltage MOSFET for their electronic circuits. Always refer to the manufacturer's datasheet for detailed specifications and characteristics.
This MOSFET is commonly used in power supplies, motor drivers, and other applications where reliable switching is critical. It has a fast switching speed, allowing it to handle high-frequency signals effectively. The FDD390N15ALZ is housed in a TO-220 package, providing adequate thermal dissipation for robust performance under load.
Overall, the FDD390N15ALZ is an excellent choice for designers seeking a reliable, efficient, and high-voltage MOSFET for their electronic circuits. Always refer to the manufacturer's datasheet for detailed specifications and characteristics.
Equivalent
The FDD390N15ALZ is a N-channel MOSFET. Equivalent products include the IRF3205, STP55NF06L, and BSS138. Always check specifications such as voltage, current, and RDS(on) to ensure compatibility in your application.
Features
The FDD390N15ALZ is an N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 150V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous drain current (Id) up to 39A, enabling efficient performance in demanding circuits.
3. On-Resistance: Low Rds(on) typically around 0.08 ohms, which helps reduce power loss and improve thermal performance.
4. Gate Threshold Voltage: Vgs(th) ranges from 2V to 4V, facilitating easy driving from standard logic levels.
5. Fast Switching Speed: Designed for quick switching applications, reducing overall switching losses.
6. Package Type: Available in a TO-220 package, which aids in effective heat dissipation and ease of mounting.
7. Applications: Suitable for use in power supplies, motor drives, and other high-efficiency power management systems.
Overall, the FDD390N15ALZ is optimized for performance in various high-power electronics applications.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 150V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous drain current (Id) up to 39A, enabling efficient performance in demanding circuits.
3. On-Resistance: Low Rds(on) typically around 0.08 ohms, which helps reduce power loss and improve thermal performance.
4. Gate Threshold Voltage: Vgs(th) ranges from 2V to 4V, facilitating easy driving from standard logic levels.
5. Fast Switching Speed: Designed for quick switching applications, reducing overall switching losses.
6. Package Type: Available in a TO-220 package, which aids in effective heat dissipation and ease of mounting.
7. Applications: Suitable for use in power supplies, motor drives, and other high-efficiency power management systems.
Overall, the FDD390N15ALZ is optimized for performance in various high-power electronics applications.
Pinout
The FDD390N15ALZ is a N-channel MOSFET with a pin count of 4. Its primary functions include serving as a switch or amplifier in various electronic applications.
The typical pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's switching action.
2. Drain (D) - Connected to the load; current flows from drain to source when the device is on.
3. Source (S) - Connected to ground or negative supply; current exits through the source.
4. Substrate (B) - Typically internally connected to the source, used for body diode characteristics.
This MOSFET is designed for high-speed switching and low on-resistance, making it suitable for power management applications in devices such as power supplies, motor drivers, and DC-DC converters. Always refer to the manufacturer's datasheet for detailed specifications and electrical characteristics.
The typical pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's switching action.
2. Drain (D) - Connected to the load; current flows from drain to source when the device is on.
3. Source (S) - Connected to ground or negative supply; current exits through the source.
4. Substrate (B) - Typically internally connected to the source, used for body diode characteristics.
This MOSFET is designed for high-speed switching and low on-resistance, making it suitable for power management applications in devices such as power supplies, motor drivers, and DC-DC converters. Always refer to the manufacturer's datasheet for detailed specifications and electrical characteristics.
Manufacturer
The FDD390N15ALZ is manufactured by ON Semiconductor, a global company specializing in the design and production of semiconductor components. ON Semiconductor provides a wide range of products, including power management, analog, sensors, and logic devices, serving various industries such as automotive, industrial, communications, and consumer electronics. The company focuses on energy efficiency and sustainability in its product development, aiming to deliver innovative solutions that meet the evolving needs of its customers. With a strong emphasis on research and development, ON Semiconductor positions itself as a leader in the semiconductor market, contributing to advancements in technology and addressing the demand for high-performance electronic components.
Application
The FDD390N15ALZ is a N-channel MOSFET commonly used in various applications, including:
1. Power Management: Efficient switching in power supplies and DC-DC converters.
2. Motor Control: Driving motors in industrial and automotive applications.
3. Load Switching: Managing high-current loads in consumer electronics.
4. Battery Management Systems: Used in charging and discharging circuits.
5. Lighting Control: For LED and other lighting systems.
6. Amplifiers and Signal Switching: In audio and RF applications.
Its high voltage and current ratings make it suitable for demanding environments.
1. Power Management: Efficient switching in power supplies and DC-DC converters.
2. Motor Control: Driving motors in industrial and automotive applications.
3. Load Switching: Managing high-current loads in consumer electronics.
4. Battery Management Systems: Used in charging and discharging circuits.
5. Lighting Control: For LED and other lighting systems.
6. Amplifiers and Signal Switching: In audio and RF applications.
Its high voltage and current ratings make it suitable for demanding environments.
Package
The FDD390N15ALZ is packaged in a DPAK (TO-252) format. This surface-mount package is designed for power transistors, offering efficient thermal performance and compact size suitable for various applications in power management.
