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FDD4N60NZ
+StücklisteMOSFET N-CH 600V 3.4A DPAK
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HerstellerOnsemi
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Herstellerteil #FDD4N60NZ
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Auf Lager2467
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Spezifikationen
| Attribut | Wert |
| Series | UniFET-II™ |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 1.7A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.8 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V |
| Power Dissipation (Max) | 114W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | FDD4N60 |
Übersicht
Description
The FDD4N60NZ is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It features a voltage rating of 600V, a continuous drain current of 4A, and a low on-resistance (RDS(on)) that contributes to improved efficiency in power conversion and switching circuits.
This device is commonly used in power supplies, motor drives, and various electronic applications where efficient switching is critical. The FDD4N60NZ is housed in a TO-220 package, which aids in heat dissipation, making it suitable for high-power applications.
Its parameters, including fast switching speeds and robust thermal performance, allow for effective operation in challenging environments. The gate threshold voltage is designed to ensure compatibility with standard drive circuits, making integration into various designs straightforward.
Overall, the FDD4N60NZ is a reliable choice for engineers seeking efficient and effective solutions for high-voltage power management.
This device is commonly used in power supplies, motor drives, and various electronic applications where efficient switching is critical. The FDD4N60NZ is housed in a TO-220 package, which aids in heat dissipation, making it suitable for high-power applications.
Its parameters, including fast switching speeds and robust thermal performance, allow for effective operation in challenging environments. The gate threshold voltage is designed to ensure compatibility with standard drive circuits, making integration into various designs straightforward.
Overall, the FDD4N60NZ is a reliable choice for engineers seeking efficient and effective solutions for high-voltage power management.
Equivalent
The FDD4N60NZ is a N-channel MOSFET with a voltage rating of 600V and a current rating of 4A. Equivalent products include:
1. STP4NK60Z
2. MTP4N60E
3. IRF840
4. NTP4N60Z
Always verify specifications, such as Rds(on) and package type, to ensure compatibility.
1. STP4NK60Z
2. MTP4N60E
3. IRF840
4. NTP4N60Z
Always verify specifications, such as Rds(on) and package type, to ensure compatibility.
Features
The FDD4N60NZ is a N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: With a maximum V_DS of 600V, it suits high-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of 4A, making it effective for various power applications.
3. Low R_DS(on): The on-resistance is typically low, around 0.68Ω, which minimizes power loss during operation.
4. Fast Switching: It is designed for fast switching speeds, enhancing performance in high-frequency applications.
5. Thermal Performance: The package allows for efficient heat dissipation, crucial for maintaining reliability under load.
6. TO-220 Package: This package type provides good thermal management and is suitable for through-hole mounting.
These features make the FDD4N60NZ ideal for use in power supplies, motor control, and other electronic circuits requiring robust performance.
1. Voltage Rating: With a maximum V_DS of 600V, it suits high-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of 4A, making it effective for various power applications.
3. Low R_DS(on): The on-resistance is typically low, around 0.68Ω, which minimizes power loss during operation.
4. Fast Switching: It is designed for fast switching speeds, enhancing performance in high-frequency applications.
5. Thermal Performance: The package allows for efficient heat dissipation, crucial for maintaining reliability under load.
6. TO-220 Package: This package type provides good thermal management and is suitable for through-hole mounting.
These features make the FDD4N60NZ ideal for use in power supplies, motor control, and other electronic circuits requiring robust performance.
Pinout
The FDD4N60NZ is a N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET operation; applying a voltage here turns the device on or off.
2. Drain (D): The terminal through which the current flows from the drain to the source when the MOSFET is on.
3. Source (S): The terminal that connects to ground or a lower potential; current flows out of this terminal when the device is active.
This device is commonly used in power switching applications, offering high voltage and current handling capabilities.
1. Gate (G): Controls the MOSFET operation; applying a voltage here turns the device on or off.
2. Drain (D): The terminal through which the current flows from the drain to the source when the MOSFET is on.
3. Source (S): The terminal that connects to ground or a lower potential; current flows out of this terminal when the device is active.
This device is commonly used in power switching applications, offering high voltage and current handling capabilities.
Manufacturer
The FDD4N60NZ is manufactured by ON Semiconductor, a prominent semiconductor company based in the United States. ON Semiconductor specializes in providing a wide range of semiconductor solutions, including power management, analog, and digital signal processing products. The company serves various industries, such as automotive, industrial, communications, and consumer electronics.
Founded in 1999, ON Semiconductor has grown through a series of acquisitions and now operates globally, offering innovative technologies that address the evolving needs of its customers. The FDD4N60NZ is a high-voltage N-channel MOSFET designed for applications requiring efficient power switching. It's commonly used in power supplies, motor control circuits, and other electronic applications where high efficiency and reliability are critical.
Overall, ON Semiconductor is recognized for its commitment to sustainability and advancing technology, making it a key player in the semiconductor industry.
Founded in 1999, ON Semiconductor has grown through a series of acquisitions and now operates globally, offering innovative technologies that address the evolving needs of its customers. The FDD4N60NZ is a high-voltage N-channel MOSFET designed for applications requiring efficient power switching. It's commonly used in power supplies, motor control circuits, and other electronic applications where high efficiency and reliability are critical.
Overall, ON Semiconductor is recognized for its commitment to sustainability and advancing technology, making it a key player in the semiconductor industry.
Application
The FDD4N60NZ is a high-voltage N-channel MOSFET primarily used in power management applications. Its key application areas include:
1. Switching Power Supplies: Used in converters and regulators for efficient power conversion.
2. Motor Control: Employed in driving electric motors in industrial and consumer applications.
3. LED Drivers: Utilized in controlling LED lighting systems for optimal performance.
4. Power Inverters: Applied in renewable energy systems, such as solar inverters.
5. Audio Amplifiers: Used in high-efficiency audio power amplifiers.
These areas benefit from its high voltage rating and efficient switching characteristics.
1. Switching Power Supplies: Used in converters and regulators for efficient power conversion.
2. Motor Control: Employed in driving electric motors in industrial and consumer applications.
3. LED Drivers: Utilized in controlling LED lighting systems for optimal performance.
4. Power Inverters: Applied in renewable energy systems, such as solar inverters.
5. Audio Amplifiers: Used in high-efficiency audio power amplifiers.
These areas benefit from its high voltage rating and efficient switching characteristics.
Package
The FDD4N60NZ is typically offered in a TO-220 package type. This package provides efficient heat dissipation and is commonly used for power MOSFET applications.
