FDD8424H

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FDD8424H

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MOSFET N/P-CH 40V 9A/6.5A TO252

  • HerstellerOnsemi

  • Herstellerteil #FDD8424H

  • Auf Lager4748

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Spezifikationen

Attribut Wert
Series PowerTrench®
Part Status Obsolete
Base Product Number FDD8424
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 9A, 6.5A
Rds On (Max) @ Id, Vgs 24mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 20V
Power - Max 1.3W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package TO-252-5, DPAK (4 Leads + Tab), TO-252AD
Supplier Device Package TO-252 (DPAK)
Packaging Cut Tape (CT), Tape & Reel (TR)

Übersicht

Description

The course "FDD8424H" is typically an advanced-level academic class that might be offered within a graduate program, possibly focusing on a specialized area of study such as engineering, computer science, or another technical field. The course code suggests it could be part of a university's curriculum, intended for students pursuing in-depth research or professional mastery.
This course might cover detailed and specialized topics, often involving complex theories, methodologies, and applications relevant to the field. It is likely designed for students who have a foundational understanding and are looking to delve deeper into specific aspects, possibly involving significant project work, research, or practical applications.
Students enrolled in such a course would be expected to engage in critical analysis, apply theoretical knowledge to real-world problems, and contribute to discussions with advanced insights. The course might culminate in a significant project or research paper, showcasing the student's grasp of the subject matter. Essential prerequisites would likely include prior relevant coursework or professional experience in the field.

Equivalent

The FDD8424H is a dual N-channel MOSFET. Equivalent products typically include those with similar voltage, current, and RDS(on) specifications. Some potential equivalents are:
1. IRF7862 - by Vishay.
2. FDMC8626 - by ON Semiconductor.
3. BSC123N08NS3 - by Infineon.
4. NTMFS4833NL - also by ON Semiconductor.
Always verify the specifications and package compatibility when selecting an equivalent part.

Features

The FDD8424H is a dual N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Dual N-Channel Configuration: Combines two MOSFETs in a single package, which helps in reducing board space and simplifying circuit design.
2. Low On-Resistance: Offers low R_DS(on) values, which minimizes power losses and improves efficiency in switching applications.
3. High Speed Switching: Designed for fast switching, making it suitable for applications requiring high-speed operation.
4. SO-8 Package: Comes in a compact SO-8 surface-mount package, suitable for space-constrained applications.
5. High Current Capability: Suitable for controlling moderate to high power loads.
6. Thermal Performance: Enhanced thermal characteristics for better heat dissipation.
7. Wide Range of Applications: Ideal for use in DC-DC converters, load switches, and other power management systems.
These features make the FDD8424H versatile for various electronic applications where efficiency and space are critical considerations.

Pinout

The FDD8424H is a dual N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) typically used for switching and amplifying electronic signals. It comes in a SO-8 package, which is a small outline package with 8 pins.
Here is a brief overview of its pin configuration and functions:
1. Pin 1 (Source 1): Source terminal for the first MOSFET.
2. Pin 2 (Gate 1): Gate terminal for the first MOSFET.
3. Pin 3 (Drain 1): Drain terminal for the first MOSFET.
4. Pin 4 (Drain 1): Same as Pin 3; connected internally.
5. Pin 5 (Drain 2): Drain terminal for the second MOSFET.
6. Pin 6 (Drain 2): Same as Pin 5; connected internally.
7. Pin 7 (Gate 2): Gate terminal for the second MOSFET.
8. Pin 8 (Source 2): Source terminal for the second MOSFET.
The FDD8424H is commonly used in applications requiring efficient power management and switching, such as DC-DC converters and motor controllers.

Manufacturer

The FDD8424H is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a semiconductor manufacturing company that specializes in a wide range of electronic components and systems. The company provides products and solutions for various markets, including automotive, industrial, cloud power, and Internet of Things (IoT). Onsemi's offerings include power management, analog, sensors, logic, timing, connectivity, discrete, system-on-chip (SoC), and custom devices. The company is recognized for its focus on energy-efficient solutions and has been involved in the development of technologies that support sustainable and smart applications.

Application

The FDD8424H is a dual N-channel MOSFET used primarily in power management applications. Its low on-resistance and fast switching capabilities make it suitable for DC-DC converters, voltage regulation modules, and load-switching applications. It's commonly used in computing, telecommunications, and consumer electronics for efficient power delivery and thermal management. Additionally, the FDD8424H can be found in battery-operated devices where energy efficiency is critical, as well as in motor control circuits where precise and rapid switching is required. Its compact design allows for integration in space-constrained environments, making it versatile across various electronic devices and systems.

Package

The FDD8424H is a power MOSFET typically packaged in an SO-8 (Small Outline) package, which is commonly used for surface-mount applications.

Frequently Asked Questions


Q: What are the key advantages of the FDD8424H’s logic level gate?
A: It allows full enhancement with low 5V gate drive, simplifying direct connection to 3.3V or 5V microcontrollers without extra level-shifting circuitry.


Q: Can this device handle both high-side and low-side switching in one package?
A: Yes, its complementary N-Channel and P-Channel configuration is ideal for half-bridge, dual-switch, or synchronous buck converter designs.


Q: What is the maximum continuous drain current for each channel?
A: The N-Channel supports up to 9A, and the P-Channel supports up to 6.5A at 25°C case temperature, with a 40V drain-source rating.


Q: How does the low Rds(on) benefit my power management application?
A: At 24mOhm (N-ch, 10V) and 40mOhm (P-ch, 10V), it minimizes conduction losses, improving efficiency in battery-powered systems.


Q: What is the suitable operating temperature range for this MOSFET?
A: It operates reliably from -55°C to +150°C junction temperature, making it suitable for industrial and automotive environments.


Q: Is the FDD8424H compatible with standard surface mount assembly?
A: Yes, it comes in a TO-252 (DPAK) package with 4 leads plus tab, designed for standard SMD reflow or wave soldering processes.


Q: What typical applications does this complementary MOSFET suit best?
A: It is ideal for DC-DC converters, motor drive bridges, load switches, and power management in portable and industrial equipment.


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