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FDD8896-F085
+StücklisteMOSFET N-CH 30V 17A/94A TO252AA
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HerstellerOnsemi
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Herstellerteil #FDD8896-F085
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Datenblatt FDD8896-F085 DataSheet
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Spezifikationen
| Attribut | Wert |
| Series | PowerTrench® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 94A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2525 pF @ 15 V |
| Power Dissipation (Max) | 80W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | FDD889 |
Übersicht
Description
The device is housed in a TO-220 package, allowing for effective heat dissipation, which is crucial for maintaining reliability and performance in high-power environments. Additionally, the FDD8896-F085 exhibits low gate charge, facilitating efficient driving by reducing switching losses. Its thermal characteristics make it suitable for applications requiring high power density. Overall, this MOSFET is widely used in consumer electronics, automotive systems, and renewable energy systems for its efficiency and reliability.
Equivalent
Features
1. Frequency Range: Operates typically within the 880 MHz to 915 MHz range, suitable for various mobile communication standards.
2. Output Power: Provides a high output power level, often around 2W, ensuring strong signal transmission.
3. Efficiency: Offers high power efficiency, which helps reduce energy consumption and heat generation.
4. Linearity: Features good linearity to minimize signal distortion, critical for maintaining communication quality.
5. Integration: Designed with a compact form factor, allowing easy integration into various systems.
6. Bias Control: Includes options for adjustable biasing to optimize performance based on system requirements.
7. Thermal Management: Equipped with thermal protection capabilities to prevent overheating.
Overall, the FDD8896-F085 is ideal for applications in mobile base stations, RF front-ends, and other wireless communication devices requiring robust performance and reliability.
Pinout
1. Gate 1 (G1): Controls the switching of the first N-channel MOSFET.
2. Drain 1 (D1): Connects to the load or power supply for the first MOSFET.
3. Source 1 (S1): Connects to ground or return path for the first MOSFET.
4. Gate 2 (G2): Controls the switching of the second N-channel MOSFET.
5. Drain 2 (D2): Connects to the load or power supply for the second MOSFET.
6. Source 2 (S2): Connects to ground or return path for the second MOSFET.
7. N/C: Not Connected (may vary by package).
8. N/C: Not Connected (may vary by package).
The FDD8896-F085 is commonly used in applications such as DC-DC converters, motor drives, and LED drivers, providing efficient switching capabilities and thermal management.
Manufacturer
Application
1. DC-DC Converters: Used in step-down (buck) and step-up (boost) converters for efficient voltage regulation.
2. Power Amplifiers: Employed in RF applications for signal amplification.
3. Load Switching: Utilized in switching applications for controlling power to loads.
4. Motor Control: Integrated into motor driver circuits for efficient operation of DC motors.
5. LED Drivers: Applied in lighting systems for efficient control and dimming of LEDs.
Its low on-resistance and high current capacity make it suitable for these applications.