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FDP61N20
+StücklistePOWER FIELD-EFFECT TRANSISTOR, 6
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HerstellerFairchild Halbleiter
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Herstellerteil #FDP61N20
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Datenblatt FDP61N20 DataSheet
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Paket TO-220-3
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Auf Lager6038
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Bulk |
| Series | UniFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 61A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 41mOhm @ 30.5A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 75 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 3380 pF @ 25 V |
| Power Dissipation (Max) | 417W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
Übersicht
Description
For example, if it's a course, FDP61N20 could be an advanced module designed for professional development, focusing on emerging technologies, pedagogical strategies, or industry-specific skills. Such programs typically aim to enhance participants' knowledge and capabilities in their respective fields, often through workshops, lectures, and interactive sessions.
If referring to a technical specification, FDP61N20 might denote a component's model number, part of a larger system or device, detailing its features, capabilities, and application areas. In this context, the introduction would involve understanding its technical aspects, intended use, and integration within broader systems.
Equivalent
Features
1. Voltage Rating: It has a drain-source voltage (V_DS) rating of 200V, which allows it to handle moderate to high voltage applications.
2. Current Capacity: The drain current (I_D) is rated at 61A, enabling it to manage significant current loads.
3. Low On-Resistance: It features an R_DS(on) of approximately 0.042 ohms, which minimizes power losses and heat generation when the MOSFET is in the 'on' state.
4. Gate Threshold Voltage: Typically around 2-4V, ensuring it can be easily driven by microcontrollers or other low-voltage logic devices.
5. Thermal Performance: It is designed to dissipate heat effectively, supporting operational stability under high load conditions.
6. Package Type: Commonly available in a TO-220 package, facilitating easy mounting and heat sinking.
These features make the FDP61N20 suitable for applications like power supplies, motor controllers, and other high-performance electronic circuits.
Pinout
1. Gate (G): This pin is used to control the MOSFET's switching operation. By applying a voltage to the gate, the MOSFET can be turned on or off.
2. Drain (D): This is the pin through which the main current flows when the MOSFET is in the 'on' state. The drain is connected to the load in a circuit.
3. Source (S): This pin is connected to the ground or negative side of the power supply in most applications. The source serves as the return path for the current flowing through the MOSFET.
These pins work together to allow the MOSFET to act as a switch or amplifier in electronic circuits. The FDP61N20 is designed for high-speed switching applications and can handle significant power levels due to its efficient design and low on-resistance.
Manufacturer
Application
1. Power Supply Units: Used in power management circuits for efficient switching.
2. Motor Control: Applicable in driving motors for industrial and consumer electronics.
3. Inverters: Used in DC-AC inverter circuits for renewable energy systems.
4. Battery Management Systems: Utilized in controlling charge and discharge cycles.
5. DC-DC Converters: Essential in step-down and step-up voltage conversion processes.
6. Switching Regulation: Employed in high-frequency switching regulators.
These applications benefit from the MOSFET’s high efficiency, fast switching speeds, and reliable performance under high current conditions.