FDS6570A

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FDS6570A

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MOSFET N-CH 20V 15A 8SOIC

  • HerstellerOnsemi

  • Herstellerteil #FDS6570A

  • Paket SOIC-8

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Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain(Id) @ 25°C 15A (Ta)
Drive Voltage(Max Rds On Min Rds On) 2.5V, 4.5V
Rds On(Max) @ Id Vgs 7.5mOhm @ 15A, 4.5V
Vgs(th)(Max) @ Id 1.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 66 nC @ 5 V
Vgs(Max) ±8V
Input Capacitance(Ciss)(Max) @ Vds 4700 pF @ 10 V
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC

Übersicht

Description

The FDS6570A is an N-channel PowerTrench® MOSFET by ON Semiconductor, designed for high-efficiency power management applications. Key features include:
- Low On-Resistance (RDS(on)): 9.5 mΩ (max at VGS = 10V), reducing conduction losses.
- Fast Switching: Optimized for high-speed switching in DC-DC converters, motor drives, and load switches.
- Voltage Rating: 30V drain-to-source (VDS), suitable for 12V–24V systems.
- Compact Package: SOIC-8, offering space-saving benefits.
Ideal for synchronous rectification, battery protection, and power distribution in consumer electronics, automotive, and industrial systems. Its low gate charge (Qg) enhances efficiency in high-frequency circuits.
For detailed specs, refer to the datasheet on ON Semiconductor’s website.

Features

The FDS6570A is an N-channel PowerTrench MOSFET with the following key features:
- Voltage Rating: 30V
- Current Rating: 13A (continuous)
- Low On-Resistance (RDS(on)): 9.5mΩ (max) at VGS = 10V
- Fast Switching: Optimized for high-efficiency power applications
- Low Gate Charge (Qg): Enhances switching performance
- Avalanche Energy Rated: Improves reliability in inductive loads
- Power Dissipation: 2.5W (max)
- Package: SOIC-8 (Compact surface-mount design)
Ideal for DC-DC converters, motor control, and power management in portable electronics.

Pinout

The FDS6570A is an 8-pin SOIC N-channel MOSFET with the following pin functions:
1. Gate (Pin 1, 8) – Controls the switching.
2. Source (Pin 2, 3, 6, 7) – Connected to ground (common for all four pins).
3. Drain (Pin 4, 5) – Output/load connection (internally linked).
Key features:
- 30V drain-source voltage (VDS)
- 9.5mΩ on-resistance (RDS(on))
- High current handling (up to 60A)
- Logic-level gate drive (4.5V compatible)
Commonly used in power switching, motor control, and DC-DC converters.

Package

The FDS6570A is a PowerTrench MOSFET from ON Semiconductor, available in an SO-8 (SOIC-8) surface-mount package. This package type is compact, widely used, and suitable for high-efficiency power applications. It features low on-resistance and fast switching, ideal for DC-DC converters and load switching. The SO-8 package ensures easy PCB integration with standard soldering processes.

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