Abbildungen dienen nur als Referenz
FDS6670A
+StücklisteMOSFET N-CH 30V 13A 8SOIC
-
HerstellerOnsemi
-
Herstellerteil #FDS6670A
-
Datenblatt FDS6670A DataSheet
-
Auf Lager7888
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 13A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 8mOhm @ 13A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 30 nC @ 5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2220 pF @ 15 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
Übersicht
Description
Key elements of the course might include a review of core principles, methodologies, and technologies relevant to the field. Students could expect to engage with both theoretical concepts and practical applications, possibly through lectures, labs, and projects. The course might also introduce essential tools or software commonly used in the profession.
Assessment could involve assignments, exams, and hands-on projects to ensure comprehension and the ability to apply learned concepts.
Students should refer to their specific institution's course catalog or syllabus for precise details, as content and focus can differ significantly across different programs and universities.
Equivalent
Features
1. Type: N-Channel MOSFET
2. Voltage Rating: It has a drain-source voltage (V_DS) of 30V.
3. Current Rating: The maximum continuous drain current (I_D) is typically around 18A.
4. On-Resistance: The MOSFET features a low on-state resistance (R_DS(on)), which is typically around 0.022 ohms. This ensures efficient operation with minimal power loss.
5. Package: It is commonly available in an SO-8 package, which is compact and allows for easy integration into various circuits.
6. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) typically ranges from 1V to 3V, allowing it to be driven easily by logic-level signals.
7. Applications: It is widely used in applications such as power management, DC-DC converters, load switching, and other high-efficiency power applications.
These features make the FDS6670A suitable for a range of electronic applications requiring efficient power control and management.
Pinout
1. Drain 1 (Pins 5, 6, 7, 8): These pins are internally connected and serve as the drain for the first N-channel MOSFET.
2. Gate 1 (Pin 4): This pin controls the gate of the first N-channel MOSFET.
3. Source 1 (Pin 3): This pin is the source terminal for the first N-channel MOSFET.
4. Gate 2 (Pin 1): This pin controls the gate of the second N-channel MOSFET.
5. Source 2 (Pin 2): This pin serves as the source terminal for the second N-channel MOSFET.
6. Drain 2 (Pins 5, 6, 7, 8): These pins are also internally connected and serve as the drain for the second N-channel MOSFET.
This configuration allows the FDS6670A to be used effectively in various applications, including as a switch or in synchronous rectification circuits.
Manufacturer
As a key player in the semiconductor industry, ON Semiconductor aims to provide energy-efficient solutions that enable customers to reduce global energy use. The company is known for its focus on delivering high-performance, innovative, and reliable semiconductor components that support sustainable energy initiatives.