FDS86267P

Abbildungen dienen nur als Referenz

FDS86267P

+Stückliste

SMALL SIGNAL FIELD-EFFECT TRANSI

  • HerstellerFairchild Halbleiter

  • Herstellerteil #FDS86267P

  • Auf Lager29106

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Supplier Rochester Electronics, LLC
Package / Case Bulk
Series PowerTrench®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain(Id) @ 25°C 2.2A (Ta)
Drive Voltage(Max Rds On Min Rds On) 6V, 10V
Rds On(Max) @ Id Vgs 255mOhm @ 2.2A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 16 nC @ 10 V
Vgs(Max) ±25V
Input Capacitance(Ciss)(Max) @ Vds 1130 pF @ 75 V
Power Dissipation (Max) 1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC

Übersicht

Description

The FDS86267P is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management applications. Manufactured by ON Semiconductor, this MOSFET is part of the company's PowerTrench® series, which is known for optimizing performance while minimizing power loss.
Key features of the FDS86267P include:
1. Low On-Resistance: This ensures minimal power loss during operation, enhancing overall efficiency.
2. High-Speed Switching: The device supports rapid switching speeds, which is crucial for applications requiring quick response times.
3. Thermal Efficiency: Designed to handle high power loads while maintaining temperature stability, which improves reliability and lifespan.
4. Package Type: Typically available in a compact, surface-mount package suitable for space-constrained applications.
The FDS86267P is commonly used in DC-DC converters, motor controllers, and other applications where efficient power management is critical. Its design and functionality make it a preferred choice for engineers seeking reliability and performance in power-sensitive electronics.

Equivalent

The FDS86267P is a dual N-channel MOSFET. Equivalent products are often determined by matching specifications such as voltage, current, and package type. Possible equivalents include:
1. IRF7319
2. Si4920DY
3. FDS6690A
4. Si4874DY
Always verify datasheets to ensure compatibility with your specific application requirements.

Features

The FDS86267P is a PowerTrench® MOSFET designed by ON Semiconductor. It is typically used in applications requiring efficient load switching and power management. Here are some key features:
1. N-Channel MOSFET: It utilizes an N-channel design, which is suitable for high-speed switching applications.
2. Low On-Resistance: This MOSFET offers a low on-resistance (R_DS(on)), which minimizes power loss and improves efficiency.
3. High Current Capacity: Designed to handle significant current loads, making it suitable for demanding applications.
4. Compact Package: It is available in a compact, space-saving package, ideal for applications with size constraints.
5. Thermal Performance: Offers good thermal performance for better reliability in high-power applications.
6. Fast Switching Speed: Capable of fast switching, improving performance in switching applications.
These features make the FDS86267P suitable for use in power supply circuits, motor drives, and other applications where efficient power handling is crucial. Always refer to the manufacturer's datasheet for specific details and parameters.

Pinout

The FDS86267P is a power MOSFET, which is often used in applications requiring efficient and reliable switching. As a MOSFET, its main function is to amplify or switch electronic signals. Specifically, it serves in power management applications to control voltage and current flow.
The FDS86267P comes in an SO-8 package and typically has 8 pins, which are standard for such a configuration. Here is a brief overview of the pin functions:
1. Drain (D): This is the terminal through which the load current enters.
2. Source (S): This is the terminal through which the load current exits.
3. Gate (G): This terminal controls the MOSFET's switching operation.
4. Body or Substrate (B): This terminal is internally connected to the source in most configurations and does not have an external pin.
Note that in the SO-8 package, multiple pins may be internally connected to a single terminal to handle higher currents, but the essential functions remain the same. Always refer to the specific datasheet for precise pin configurations and characteristics.

Manufacturer

The FDS86267P is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a leading supplier in the semiconductor industry, providing a wide range of products including power and signal management, logic, discrete, and custom devices. These semiconductor solutions are widely used in various applications such as automotive, industrial, cloud, and Internet of Things (IoT). The company focuses on driving energy-efficient innovations, helping to build a better future through smarter technology solutions. Headquartered in Phoenix, Arizona, onsemi is a globally recognized company with a strong commitment to sustainability and corporate responsibility.

Application

The FDS86267P is a PowerTrench® MOSFET designed for high-efficiency power conversion applications. Its key application areas include:
1. DC-DC Converters: Utilized in voltage regulation modules for efficient power management.
2. Power Supplies: Suitable for use in switch-mode power supplies due to its low on-resistance and fast switching capabilities.
3. Battery Management Systems: Provides efficient battery charging and discharging functionalities.
4. Motor Control: Employed in applications requiring precise motor speed and torque control.
5. Telecommunications: Used in power regulation circuits for telecom equipment.
6. Consumer Electronics: Integrated into devices requiring efficient power usage, such as laptops and gaming consoles.
These application areas leverage its efficiency and thermal performance benefits.

Package

The FDS86267P is a PowerTrench® MOSFET from ON Semiconductor. It typically comes in a Power 56 package, which is a surface-mount package designed to provide low on-resistance and efficient thermal performance.

Produkte, die mit FDS86267P zusammenhängen