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FFSB10120A-F085
+Stückliste1200V 10A AUTO SIC SBD
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HerstellerOnsemi
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Herstellerteil #FFSB10120A-F085
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Paket TO-263-3
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Auf Lager5502
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified(Io) | 21A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 10 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
| Capacitance @ Vr F | 612pF @ 1V, 100kHz |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263) |
Übersicht
Description
1. Overview: An introduction to FFSB10120A-F085 would typically begin with a brief summary of its purpose and scope. This could involve explaining what FFSB10120A-F085 is—whether it's a course code, a technical specification, or a product model.
2. Objectives: The introduction might outline the key objectives or learning outcomes associated with FFSB10120A-F085, detailing what participants or readers are expected to gain or understand upon completion.
3. Structure: It would describe the structure or format, such as the number of modules, chapters, or sections included, and any prerequisites needed.
4. Applications/Implications: There could be a discussion on the practical applications or implications of understanding FFSB10120A-F085 within its relevant field.
5. Key Features: Highlights of any unique aspects or noteworthy features of FFSB10120A-F085 might be included to give an idea of its importance or distinctiveness.
For more specific information, the actual document or course description would be necessary.
Equivalent
1. Cree/Wolfspeed: C3D10120A
2. Rohm: SCS210AJ
3. Infineon: IDH12G120C5
4. STMicroelectronics: STPSC10H12
These products share similar voltage and current ratings, making them potential substitutes, but always verify specific application requirements before making replacements.
Features
1. SiC Technology: Provides high efficiency and high voltage capabilities, making it suitable for demanding power applications.
2. High Voltage Rating: Typically rated around 1200V, which makes it ideal for high-voltage applications.
3. Low Forward Voltage Drop: Offers low conduction losses, improving overall efficiency.
4. Fast Switching: Faster switching speeds compared to traditional silicon diodes, reducing switching losses.
5. High Temperature Capability: Can operate at higher temperatures, typically up to 175°C, due to the inherent properties of SiC.
6. Robust Design: Exhibits high surge current capability, which enhances its reliability in power circuits.
7. Compact Package: Often available in small form factors, allowing for more compact designs in electronic systems.
This diode is well-suited for applications like power supplies, solar inverters, and industrial motor drives where efficiency and reliability are critical.
Pinout
The FFSB10120A-F085 generally has a TO-247 package, which typically features three pins. However, since this is a diode, only two pins are functionally used:
1. Anode (A): This is the positive terminal of the diode through which conventional current enters.
2. Cathode (K): This is the negative terminal through which current exits.
The third pin in the TO-247 package can sometimes be a no-connect (NC) or used for additional purposes like thermal management, depending on the specific implementation by the manufacturer. Always refer to the specific datasheet for the most accurate and detailed information regarding pin configuration and additional features.
Manufacturer
ON Semiconductor is known for its focus on energy-efficient innovations and plays a significant role in driving advancements in power management technology. Their products are integral in enabling electronic products to be more efficient, which is crucial for reducing energy consumption and improving overall sustainability.