FGY75N60SMD

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FGY75N60SMD

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IGBT 600V 150A 750W POWER-247

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Spezifikationen

Attribut Wert
Supplier Rochester Electronics, LLC,onsemi
Package Bulk,Tube
ProductStatus Obsolete
IGBTType Field Stop
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 150 A
Current-CollectorPulsed(Icm) 225 A
Vce(on)(Max)@VgeIc 2.5V @ 15V, 75A
Power-Max 750 W
SwitchingEnergy 2.3mJ (on), 770µJ (off)
InputType Standard
GateCharge 248 nC
Td(on/off)@25°C 24ns/136ns
TestCondition 400V, 75A, 3Ohm, 15V
ReverseRecoveryTime(trr) 55 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-247-3 Variant

Übersicht

Description

FGY75N60SMD is a high‑voltage, high‑current N‑channel MOSFET in an SMD package. The “75N60” suggests roughly 75 A continuous drain current with about 600 V drain–source rating, making it suitable for switching power stages in SMPS, motor drives, inverters, and similar applications. It acts as a fast, efficient switch controlled by the gate voltage.
Key specs to check in the datasheet:
- Vds ≈ 600 V; Id ≈ 75 A; Rds(on) at Vgs (often specified at 10 V, sometimes at 4.5 V)
- Gate threshold, total gate charge (Qgs, Qgd), switching speed
- Thermal metrics (Rθ(j-a)), package power dissipation
- Safe operating area and exact pinout for the specific SMD variant
For exact numbers and pin configuration, consult the manufacturer’s datasheet for your specific batch and SMD package (e.g., DPAK/TO-252).

Features

Here are the typical features of the FGY75N60SMD (N-channel MOSFET):
- N-channel enhancement-mode power MOSFET
- Vds: 600 V
- Id (continuous): around 0.75 A (typical)
- Rds(on): roughly 1.5–2.0 Ω (typical) at Vgs = 10 V
- Gate threshold: ~2–4 V
- Fast switching with low gate charge
- Avalanche rugged / good SOA
- Package: surface-mount (SMD) type (e.g., DPAK/D2PAK style)
- Applications: high-voltage switching, offline SMPS, power adapters, isolated power supplies
Note: exact numbers (Rds(on), Id, Vgs(th)) can vary by lot; please consult the latest datasheet for precise values.

Pinout

- Pin count: 3 pins (Gate, Drain, Source) with the drain also tied to the metal tab in the SMD package.
- Function: N-channel enhancement-mode power MOSFET used as a high‑voltage switch (typical for power supplies, motor drives, inverters).

Application

FGY75N60SMD is a high-voltage, high‑current N‑channel MOSFET (600 V class, ~75 A) in an SMD package. Common applications: offline switch‑mode power supplies (AC–DC and DC–DC), LED drivers, solar/wind inverters, motor-drive/inverter stages, UPS input/output stages, and general power‑switching in industrial equipment and battery‑powered tools.

Package

FGY75N60SMD is an N-channel MOSFET in a surface-mount D-PAK (TO-252) package.

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