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FM22L16-55-TG
+StücklisteIC FRAM 4MBIT PARALLEL 44TSOP II
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HerstellerCypress Semiconductor Corp.
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Herstellerteil #FM22L16-55-TG
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Datenblatt FM22L16-55-TG DataSheet
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Paket PG-TSOP-44
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Auf Lager4399
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tray,Tray |
| Series | F-RAM™ |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FRAM |
| Technology | FRAM (Ferroelectric RAM) |
| Memory Size | 4Mb (256K x 16) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 110ns |
| Access Time | 110 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Übersicht
Description
Operating at a voltage range of 4.5V to 5.5V with a maximum access time of 55 nanoseconds, this F-RAM is designed for efficient performance. Its high endurance can support over 10^14 read/write cycles, significantly surpassing the endurance of EEPROM and Flash memory. The FM22L16-55-TG is commonly used in industrial automation, metering, medical devices, and mission-critical systems where data integrity and reliability are crucial.
The device is housed in a 44-pin thin small outline package (TSOP), ensuring compatibility with standard manufacturing processes and ease of integration into existing systems.
Equivalent
1. Cypress (Infineon) FM22L16-55-TG – Direct equivalent within the series.
2. Fujitsu MB85R256A – A similar 256Kb F-RAM option.
3. Texas Instruments MSP430FRAM-based microcontrollers - If considering integrated solutions with F-RAM.
Ensure compatibility by checking datasheets for pin configuration, timing, and electrical characteristics.
Features
1. Memory Capacity: 256 Kbit organized as 32K x 8.
2. Speed: Fast read/write operations with a cycle time of 55 ns.
3. Endurance: Supports over 10^14 read/write cycles, making it highly durable.
4. Data Retention: Offers data retention for more than 10 years without power.
5. Voltage Range: Operates on a voltage range from 4.5V to 5.5V.
6. Low Power Consumption: Consumes very low power during read and write operations.
7. No Battery Required: Unlike traditional SRAM, it does not require a battery for data retention.
8. Packaging: Available in a 44-pin TQFP (Thin Quad Flat Pack) package.
9. Interface: Uses a parallel interface for easy integration with microcontrollers and other digital systems.
These features make the FM22L16-55-TG suitable for applications requiring reliable data storage with frequent read/write cycles, such as industrial automation, metering, and medical devices.
Manufacturer
Application
1. Industrial Automation: For data logging and control systems.
2. Energy Management: Used in smart meters and energy monitoring devices.
3. Medical Devices: For data retention in portable and implantable devices.
4. Automotive: Employed in infotainment systems and electronic control units.
5. Consumer Electronics: In gaming devices and home appliances for quick data access.
6. Telecommunications: For network equipment requiring fast data storage.
Its reliability and durability make it suitable for mission-critical applications where data integrity is essential.