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FM25L16B-G
+StücklisteIC FRAM 16KBIT SPI 20MHZ 8SOIC
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HerstellerCypress Semiconductor Corp.
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Herstellerteil #FM25L16B-G
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Datenblatt FM25L16B-G DataSheet
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Paket PG-DSO-8
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Auf Lager2665
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package | Bulk,Tube |
| Series | F-RAM™ |
| ProductStatus | Active |
| MemoryType | Non-Volatile |
| MemoryFormat | FRAM |
| Technology | FRAM (Ferroelectric RAM) |
| MemorySize | 16Kb (2K x 8) |
| MemoryInterface | SPI |
| ClockFrequency | 20 MHz |
| Voltage-Supply | 2.7V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Übersicht
Description
Key features of the FM25L16B-G include fast write speeds, with no write delays, and a virtually unlimited number of read/write cycles, which significantly surpasses traditional EEPROM and flash memory technologies in terms of endurance. It operates over a wide voltage range, typically from 2.7V to 3.6V, and features low power consumption, making it suitable for battery-operated devices.
The FM25L16B-G is ideal for applications such as industrial control systems, metering, medical devices, and other embedded systems that require reliable data retention without power. Its robust performance in harsh environments further enhances its suitability for critical data logging and storage applications.
Equivalent
Features
1. Non-Volatile Memory: Retains data without power, offering reliable storage.
2. Fast Write Speed: No write delays typical of EEPROM, allowing for instant writes.
3. High Endurance: Supports up to 10^14 read/write cycles, far surpassing traditional memory technologies.
4. Low Power Consumption: Operates efficiently, suitable for battery-powered applications.
5. SPI Interface: Compatible with standard Serial Peripheral Interface, facilitating easy integration.
6. Wide Voltage Range: Operates between 2.0V to 3.6V.
7. High Reliability: Data retention of over 151 years, ensuring long-term stability.
8. Industrial Temperature Range: Functional across -40°C to +85°C, making it suitable for harsh environments.
9. Small Footprint: Available in a compact 8-pin SOIC package, ideal for space-constrained designs.
These features make the FM25L16B-G an attractive choice for applications requiring high endurance, fast data access, and robust data retention.
Pinout
1. CS (Chip Select): Activates the device when low.
2. SO (Serial Output): Outputs data from the FRAM during a read operation.
3. WP (Write Protect): Protects against inadvertent writes to the memory when held low.
4. VSS (Ground): Ground reference for the power supply.
5. SI (Serial Input): Inputs data to the FRAM during a write operation.
6. SCK (Serial Clock Input): Synchronizes data movement on the serial interface.
7. HOLD: Pauses communication with the device without resetting the serial sequence.
8. VDD (Power Supply): Positive power supply input.
The FM25L16B-G is used for non-volatile memory applications where high endurance, fast write/read speeds, and low power consumption are crucial.
Manufacturer
Application
1. Industrial Automation: For data logging and control systems.
2. Consumer Electronics: In devices requiring reliable data retention, like smart meters and wearables.
3. Automotive Systems: For data storage in ECUs and infotainment systems.
4. Medical Devices: Where durable and quick data logging is critical.
5. Telecommunications: For network and communication equipment.
6. Energy Management: In applications like smart grids and power monitoring.
These areas benefit from the FRAM's ability to frequently update data without wear-related failures.