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MOSFET 2N-CH 150V 53A I4-PAC
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HerstellerIXYS
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Herstellerteil #FMM110-015X2F
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Paket i4-Pac™-5
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Auf Lager2001
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | IXYS |
| Package / Case | Tube |
| Series | GigaMOS™, HiPerFET™, TrenchT2™ |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain(Id) @ 25°C | 53A |
| Rds On(Max) @ Id Vgs | 20mOhm @ 55A, 10V |
| Vgs(th)(Max) @ Id | 4.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 150nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 8600pF @ 25V |
| Power - Max | 180W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
