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FQA11N90
+StücklisteMOSFET N-CH 900V 11.4A TO3P
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HerstellerFairchild Halbleiter
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Herstellerteil #FQA11N90
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Auf Lager3416
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Spezifikationen
| Attribut | Wert |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Tube |
| Series | QFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 900 V |
| Current - Continuous Drain(Id) @ 25°C | 11.4A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 960mOhm @ 5.7A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 94 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 3500 pF @ 25 V |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3P |
Übersicht
Description
FQA11N90 is a high-voltage N-channel MOSFET (enhancement mode) used in offline switching power applications. Key points:
- Ratings: Vds about 900V, Id around 11 A.
- Gate drive: typically requires about 10V to achieve low Rds(on); Vgs max ±20V.
- Characteristics: intrinsic body diode; designed for switching with ruggedness suitable for SMPS and PFC stages.
- Packaging: available in common power packages (e.g., TO-220, D²PAK) for through-hole or surface-mount designs.
- Applications: primary switches in offline SMPS, flybacks, PFC circuits, and high-voltage motor drives.
- Design notes: heat sinking is important due to losses; ensure gate voltage stays within limits; verify safe operating area (SOA) for your operating conditions; consult the datasheet for exact Rds(on), thresholds, and avalanche ratings.
- Availability: part references can vary; check current datasheet from Onsemi/Fairchild or authorized distributors for precise specs and latest packaging.
If you need, I can pull the exact datasheet figures.
- Ratings: Vds about 900V, Id around 11 A.
- Gate drive: typically requires about 10V to achieve low Rds(on); Vgs max ±20V.
- Characteristics: intrinsic body diode; designed for switching with ruggedness suitable for SMPS and PFC stages.
- Packaging: available in common power packages (e.g., TO-220, D²PAK) for through-hole or surface-mount designs.
- Applications: primary switches in offline SMPS, flybacks, PFC circuits, and high-voltage motor drives.
- Design notes: heat sinking is important due to losses; ensure gate voltage stays within limits; verify safe operating area (SOA) for your operating conditions; consult the datasheet for exact Rds(on), thresholds, and avalanche ratings.
- Availability: part references can vary; check current datasheet from Onsemi/Fairchild or authorized distributors for precise specs and latest packaging.
If you need, I can pull the exact datasheet figures.
Equivalent
FQA11N90 is a 900 V, 11 A N-channel MOSFET (Fairchild). Common cross‑references (same die family) include: IRFQ11N90 (International Rectifier), IXFN11N90 (IXYS), STP11N90 (STMicroelectronics). Availability depends on package (TO-220, D2PAK, etc.). Always verify Vds, Id, Rds(on) and pinout in the datasheet for the exact package.
Features
FQA11N90 features (concise):
- N-channel, enhancement-mode power MOSFET
- High voltage: 900 V blocking rating
- Continuous drain current: ~11 A
- Trench MOSFET technology for low gate charge and fast switching
- Low on-resistance for reduced conduction losses
- Fast switching with low output capacitance
- Rugged dv/dt and di/dt performance
- Avalanche rugged with robust body diode for energy absorption
- Gate drive: typically requires positive gate drive (≈ 10 V) for full conduction
- RoHS-compliant; available in common power packages (e.g., TO-220 and surface-mount D²PAK/DPAK variants)
- Suitable for SMPS, PFC, inverters, motor drives, and other high-voltage switching applications
Note: for exact electrical specifications (Rds(on), max power, packaging), consult the latest datasheet.
- N-channel, enhancement-mode power MOSFET
- High voltage: 900 V blocking rating
- Continuous drain current: ~11 A
- Trench MOSFET technology for low gate charge and fast switching
- Low on-resistance for reduced conduction losses
- Fast switching with low output capacitance
- Rugged dv/dt and di/dt performance
- Avalanche rugged with robust body diode for energy absorption
- Gate drive: typically requires positive gate drive (≈ 10 V) for full conduction
- RoHS-compliant; available in common power packages (e.g., TO-220 and surface-mount D²PAK/DPAK variants)
- Suitable for SMPS, PFC, inverters, motor drives, and other high-voltage switching applications
Note: for exact electrical specifications (Rds(on), max power, packaging), consult the latest datasheet.
Pinout
Pin count: 3 leads (TO-220 style; tab is the Drain).
Pin functions (typical orientation, front view):
- Pin 1: Gate
- Pin 2: Drain
- Pin 3: Source
Note: The metal tab is connected to Drain. FQA11N90 is an N-channel enhancement-mode power MOSFET used for high-voltage switching.
Pin functions (typical orientation, front view):
- Pin 1: Gate
- Pin 2: Drain
- Pin 3: Source
Note: The metal tab is connected to Drain. FQA11N90 is an N-channel enhancement-mode power MOSFET used for high-voltage switching.
Manufacturer
Manufacturer: Fairchild Semiconductor (now part of ON Semiconductor).
Company type: A semiconductor company that designs and manufactures electronic components such as transistors, diodes, MOSFETs, and integrated circuits.
Company type: A semiconductor company that designs and manufactures electronic components such as transistors, diodes, MOSFETs, and integrated circuits.
Application
FQA11N90 is a high‑voltage N‑channel MOSFET (about 900 V, ~11 A) used as a switching device in offline power electronics. Common applications include:
- AC‑DC switch‑mode power supplies and PFC boost stages
- Flyback/forward converter circuits in power adapters and displays
- DC‑DC converters in telecom/server power modules
- Inverters and motor drives (AC motors, UPS)
- Solar inverters, battery chargers, energy‑storage systems
Suitable for high‑voltage, high‑speed switching in a variety of power‑conversion topologies.
- AC‑DC switch‑mode power supplies and PFC boost stages
- Flyback/forward converter circuits in power adapters and displays
- DC‑DC converters in telecom/server power modules
- Inverters and motor drives (AC motors, UPS)
- Solar inverters, battery chargers, energy‑storage systems
Suitable for high‑voltage, high‑speed switching in a variety of power‑conversion topologies.
Package
FQA11N90 is in a TO-220AB (through-hole) package.
